SIM800H Document SIM800H User Manual Compliance Information FCC Compliance Statement: This device complies with Part 15 of the FCC Rules . Operation is subject to the following two conditions: 1. This device may not cause harmful interference, and 2. This device must accept any interference received, including interference that may cause undesired operation. This device must accept any interference received, including interference that may cause undesired operation. Product that is a radio transmitter is labeled with FCC ID. FCC Caution:
(1)Exposure to Radio Frequency Radiation. This equipment must be installed and operated in accordance with provided instructions and the antenna(s) used for this transmitter must be installed to provide a separation distance of at least 20 cm from all persons and must not be collocated or operating in conjunction with any other antenna or transmitter. End-users and installers must be provided with antenna installation instructions and transmitter operating conditions for satisfying RF exposure compliance.
(2) Any changes or modifications not expressly approved by the grantee of this device could void the user's authority to operate the equipment.
(3) This Transmitter must not be co-located or operating in conjunction with any other antenna or transmitter.
(4) Changes or modifications to this unit not expressly approved by the party responsible for compliance could void the user authority to operate the equipment.
(5) the modules FCC ID is not visible when installed in the host, or
(6) if the host is marketed so that end users do not have straight forward commonly used methods for access to remove the module so that the FCC ID of the module is visible; then an additional permanent label referring to the enclosed module: Contains Transmitter Module FCC ID: UDV-20160721 or Contains FCC ID:
UDV-20160721 must be used. 1. SIM800H Description 1.1. Summarize SIM800H designed by SIMCom is a quad band module which supports GSM/GPRS. The baseband circuit is based on MTK and RF circuit is based on RFMD. It works at quad bands------GSM850, EGSM900, DCS1800, and PCS1900. CPU clock is based on 26MHz crystal. The main IC includes MT6260D and RF7198. 1.2. Feature Quad-Band 850/900/1800/1900MHz GPRS multi-slot class 12/10 GPRS mobile station class B Compliant to GSM phase 2/2+
Class 4 (2 W @ 850/900 MHz) Class 1 (1 W @ 1800/1900MHz)
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SIM800H Document Dimensions: 15.8*17.8*2.4 mm Weight: 1.25 g Control via AT commands (3GPP TS 27.007, 27.005 and SIMCom enhanced AT Commands) Supply voltage range 3.6~4.2 V Low power consumption Operation temperature:-30~80 88 LGA pads include Interface to external SIM 3V/1.8V Analog audio interface RTC backup Serial interface USB interface Keypad interface LCD interface Antenna pad PCM GPIO ADC
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SIM800H Document 1.3. Pin
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SIM800H Document 1.4. Picture 1.5. Dimension Figure 1: Top and Bottom view of SIM800H Figure 2: Dimention
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SIM800H Document 2. Detail Block Diagram PCS 1900: 18501910 MHz (TX), 19301990 MHz (RX) GSM 850: 824849 MHz (TX), 869894 MHz (RX) Figure 3: Block diagram of SIM800H 3. Electrical and Reliability Characteristics 3.1. Absolute Maximum Ratings The absolute maximum ratings stated in following table are stress ratings under non-operating conditions. Stresses beyond any of these limits will cause permanent damage to SIM800H. Table 1: Absolute maximum ratings Symbol VBAT VBUS
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II Parameter Power supply voltage
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Input current Typ
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30
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Max 4.5 V 8 Unit V VBUS mA Min
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SIM800H Document
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IO mA
*These parameters are for digital interface pins, such as keypad, GPIO, I2C, UART, LCD and DEBUG. Output current 8
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3.2. Digital Interface Characteristics Table 2: Digital interface characteristics Parameter High-level input current Low-level input current High-level input voltage Low-level input voltage Symbol IIH IIL VOH VOL
* These parameters are for digital interface pins, such as keypad, GPIO, I2C, UART, LCD, PWMs and DEBUG. Max 3.1 0.7
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0.4 Unit V V V V Min 2.1
-0.3 2.4
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Typ
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3.3. SIM Card Interface Characteristics Table 3: SIM card interface characteristics Symbol IIH IIL VIH VIL VOH VOL Parameter High-level input current Low-level input current High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage 3.4. SIM_VDD Characteristics Table 4: SIM_VDD characteristics Symbol VO IO Parameter Output voltage Output current Min
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-1 1.4 2.4
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1.62 2.7
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Min 2.70
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Typ
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Typ 2.80
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Max 1 1
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0.27 0.4
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0.36 0.4 Max 2.90 50 Unit uA uA V V V V V V V V Unit V mA SIM800H Document 3.5. VRTC Characteristics Table 5: VRTC characteristics Symbol VRTC-IN IRTC-IN VRTC-OUT IRTC-OUT Parameter VRTC input voltage VRTC input current VRTC output voltage VRTC output current Min
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Typ 2.8 3 2.8 Max
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2 Unit V uA V mA 3.6. Current Consumption (VBAT = 3.8V) Table 6: Current consumption Symbol IVRTC Parameter VRTC current VBAT disconnects. Backup battery is 3 V Conditions Power down mode Sleep mode Idle mode BS-PA-MFRMS=9 BS-PA-MFRMS=5 BS-PA-MFRMS=2 GSM 850 EGSM 900 DCS 1800 PCS 1900 Unit uA uA mA Value 2 50 1.0 1.2 1.8 19 mA IVBAT VBAT current Voice call Data mode GPRS(1Rx,1Tx) GSM 850 EGSM 900 DCS 1800 PCS 1900 GSM 850 EGSM 900 DCS 1800 PCS 1900 Data mode GPRS(4Rx,1Tx) GSM 850 EGSM 900
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PCL=5 PCL=12 PCL=19 PCL=0 PCL=7 PCL=15 PCL=5 PCL=12 PCL=19 PCL=0 PCL=7 PCL=15 PCL=5 PCL=12 PCL=19 250 110 76 168 89 76 240 110 83 170 95 80 270 150 120 mA mA mA mA SIM800H Document DCS 1800 PCS 1900 GSM 850 EGSM 900 DCS 1800 PCS 1900 PCL=0 PCL=7 PCL=15 PCL=5 PCL=12 PCL=19 PCL=0 PCL=7 PCL=15 205 130 115 440 185 130 300 155 122 2 mA mA mA A Data mode GPRS(3Rx,2Tx) IVBAT-peak Peak current During Tx burst 3.7. Electro-Static Discharge SIM800H is an ESD sensitive component, so more attention should be paid to the procedure of handling and packaging. The ESD test results are shown in the following table. Table 7: The ESD characteristics (Temperature: 25, Humidity: 45 %) Contact discharge Air discharge 12KV 12KV 8KV 10KV 5KV 8KV Pin VBAT GND RXD, TXD Antenna port SPK_P/SPK_N/MIC_P/MIC_N PWRKEY 4. Radio Characteristics 6KV 6KV 2KV 5KV 2KV 2KV 4.1. Module RF Output Power The following table shows the module conducted output power, it is followed by the 3GPP TS 05.05 technical specification requirement. Table 8: SIM800H GSM 900 and GSM 850 conducted RF output power PCL Nominal output power (dBm) Tolerance (dB) for conditions Normal Extreme GSM850EGSM900
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SIM800H Document 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19-31 33 31 29 27 25 23 21 19 17 15 13 11 9 7 5 2 3 3 3 3 3 3 3 3 3 3 5 5 5 5 2.5 4 4 4 4 4 4 4 4 4 4 6 6 6 6 Table 9: SIM800H DCS 1800 and PCS 1900 conducted RF output power PCL Nominal output power (dBm) Tolerance (dB) for conditions Normal Extreme DCS1800PCS1900 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 2 3 3 3 3 3 3 3 3 4 4 4 4 4 5 5 2.5 4 4 4 4 4 4 4 4 5 5 5 5 5 6 6 For the modules output power, the following is should be noted:
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SIM800H Document At GSM900 and GSM850 band, the module is a class 4 device, so the modules output power should not exceed 33dBm, and at the maximum power level, the output power tolerance should not exceed +/-2dB under normal condition and +/-2.5dB under extreme condition. At DCS1800 and PCS1900 band, the module is a class 1 device, so the modules output power should not exceed 30dBm, and at the maximum power level, the output power tolerance should not exceed +/-2dB under normal condition and +/-2.5dB under extreme condition. 4.2. Module RF Receive Sensitivity The following table shows the modules conducted receive sensitivity, it is tested under static condition. Table 10: SIM800H conducted RF receive sensitivity Frequency GSM850 EGSM900 DCS1800 PCS1900 Receive sensitivityTypical
-108dBm
-108dBm
-108dBm
-108dBm Receive sensitivity(Max)
-106dBm
-106dBm
-106dBm
-106dBm 4.3. Module Operating Frequencies The following table shows the modules operating frequency range; it is followed by the 3GPP TS 05.05 technical specification requirement. Table 11: SIM800H operating frequencies Frequency GSM850 EGSM900 DCS1800 PCS1900 Receive 869 ~ 894MHz 925 ~ 960MHz 1805 ~ 1880MHz 1930 ~ 1990MHz Transmit 824 ~ 849 MHz 880 ~ 915MHz 1710 ~ 1785MHz 1850 ~ 1910MHz 5. Antenna interface There are three antenna ports for SIM800H, GSM antenna port named RF_ANT, The RF interface of the three antenna ports has an impedance of 50.The maximum gain of the GSM antenna gain should not exceed 3dBi considering the SAR radio. No antenna gain may be used that would exceed the 2W EIRP power limit in 1900MHz band. The input impendence of the antenna should be 50, and the VSWR should be less than 2. The isolations of the three antenna should be bigger than 30db It is recommended that the GSM antenna.
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SIM800H Document It have according to reference trace and matching circuit testing all FCC items,and all items satisfy FCC requirements.Only the reference trace and matching circuit is certified, antenna design must refer to it, any other deviations require testing Class II applications as required by FCC. The certified matching circuit as following:
5.1 GSM Antenna Interface There is a GSM antenna pad named RF_ANT for SIM800H the connection of the antenna must be decoupled from DC voltage. This is necessary because the antenna connector is DC coupled to ground via an inductor for ESD protection. The external antenna must be matched properly to achieve best performance, so the matching circuit is necessary, the connection is recommended as following:
Figure1: GSM antenna matching circuit R101C101C102 are the matching circuit, the value should be defined by the antenna design. normally R101 is 0, C101 C102 are not SMD. The RF connector is used for conducted
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SIM800H Document 5.1 Dipole Antenna Reference PCBLayout Requirements. 5.2. Dipole Antenna Reference Design PCB Mount these devices with brown mark facing up. Units: mm Line width should be designed to provide 50impedance matching characteristics.
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SIM800H Document
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SIM800H Document 5.3 Dipole Antenna Reference Design Schematic
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SIM800H Document Contact us:
Shanghai SIMCom Wireless Solutions Co.,Ltd. Address: Building A, SIM Technology Building, No. 633, Jinzhong Road, Shanghai, P. R. China 200335 Tel: +86 21 3252 3300 Fax: +86 21 3252 2030 URL: www.sim.com/wm
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