FCC ID: XMR202008EG95NAXD LTE Module

 

G95 EG Ha Se war ries re D s Des signn rdw LTES Standard Module Series Versio on: 1.8 Date:

2020-09 9-03 Statu s: Prelim minary www.quecctel.com LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Our aim is please con Quectel Wi Building 5, S 200233, Ch Tel: +86 21 Or our loca For technic http://www.q s to provid ntact our co e custome ompany hea rs with tim adquarters:

mely and co omprehens ive service e. For any assistance e, reless Solu Shanghai Bu hina utions Co., usiness Par Ltd. k Phase III (

5108 6236 Email:

info@quect tel.com

(Area B), No o.1016 Tianl in Road, Min nhang Distri ict, Shangha ai al office. Fo or more info ormation, p lease visit:h http://www.q quectel.com/

/support/sal es.htm. cal support quectel.com t, or to repo m/support/tec ort documen chnical.htmo ntation erro or email tosu ors, please upport@que visit:

ectel.com. GENERAL QUECTEL PROVIDED TO ENSUR MAKE ANY ANY LIABIL RELIANCE CHANGE W NOTES OFFERS TH D IS BASED RE THE QU Y WARRANT LITY FOR A UPON TH WITHOUT P HE INFORM D UPON CU ALITY OF T TY AS TO TH ANY INJURY E INFORM RIOR NOTI MATION AS USTOMERS THE INFOR HE INFORM Y, LOSS OR ATION. ALL CE. A SERVICE REQUIRE RMATION IT MATION CO R DAMAGE L INFORMA E TO ITS C MENTS. QU T MAKES AV NTAINED H E OF ANY K ATION SUP CUSTOMER UECTEL MA AVAILABLE. HEREIN, AN KIND INCUR PPLIED HER RS. THE INF AKES EVER QUECTEL ND DOES NO RRED BY U REIN IS SU FORMATION N RY EFFORT T DOES NOT T OT ACCEPT T USE OF OR R UBJECT TO O DISCLAIME WHILE QU UNDER DE AND FEAT OTHERWIS KIND, IMPL UNDER DE ALL LIABIL FUNCTION OR DAMAG ER UECTEL HA EVELOPME TURES CO SE PROVID LIED OR E EVELOPMEN ITY FOR AN S AND FEA GE MAY HAV HT RMATION CO S SOLUTIO THIS DOCU EN. OFFEND D IN THE E COPYRIGH THE INFOR WIRELESS EDITING T FORBIDDE RESERVED DESIGN. AS MADE E NT ARE FR OULD CON DED BY VA EXPRESS, W NT. TO THE NY LOSS O ATURES UN VE BEEN F EFFORTS T REE FROM NTAIN ERR LID AGREE WITH RESP E MAXIMUM OR DAMAGE NDER DEVE ORESEEAB TO ENSURE ERRORS, RORS, INA EMENT, QU PECT TO T M EXTENT P E SUFFERE ELOPMENT BLE. E THAT TH IT IS POSS ACCURACIE UECTEL MA THE USE O PERMITTED ED IN CONN T, REGARDL HE FUNCTI SIBLE THA ES AND O AKES NO W OF FEATUR D BY LAW, NECTION W LESS OF W ONS AND AT THESE F OMISSIONS WARRANTIE RES AND F QUECTEL WITH THE U WHETHER S FEATURES S FUNCTIONS S S. UNLESS S ES OF ANY Y FUNCTIONS S EXCLUDES S USE OF THE E SUCH LOSS S ONTAINED ONS CO., UMENT AS DERS WILL EVENT OF A HERE IS P LTD. TRA WELL AS BE HELD L A PATENT ROPRIETAR NSMITTING USING TH LIABLE FOR GRANT OR RY TECHNI G, REPROD HE CONTEN R PAYMENT R REGISTRA CAL INFOR DUCING, D NT WITHOU T OF DAMAG ATION OF RMATION O DISSEMINA UT PERMIS GES. ALL R A UTILITY F QUECTEL L ATING AND D SSION ARE E RIGHTS ARE E MODEL OR R es_Hardwa are_Design 1

/ 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Copyright Quectel W Wireless So olutions Co o., Ltd. 2020 0. All rights reserved. es_Hardwa are_Design 2 2 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Abou ut the e Doc cume nt Revisi on His tory Version Date A Author Des scription 1.0 2017-03

-22 Initi ial elixYIN/

F EN/

Ye Yeoman CHE ackie WANG G Ja 1.1 2018-01

-04 Ye Yeoman CHE R Rex WANG EN/

1.2 2018-03

-14 elix YIN/

F R Rex WANG es_Hardwa are_Design 3 3 / 103 EG95_Serie 1. 2. 3. 4. 5. 6. 7. 8. 9. 1. 2. 3. 4. 5. 6. 7. 8. 10. on of UMTS S and GSM diagram in F erating frequ Figure 1. uencies in umption in Ta ucted RF able 26. receiving ulti-slot class ses in d B28A. he descriptio Table 2. efunctional module ope urrent consu the condu n Table 28. e GPRS mu Added ban Updated th features in Updated th Updated m Table 21. Updated cu Updated sensitivityin Updated th Table 33. Added ther Added a GN of the modu Addedpack rmal conside ND pad in e ules footprin kaging inform eration in Ch ach of the fo nt in Chapte mation in Ch hapter 5.8 our corners er 6.2. hapter 7.3. description Added the Updated th he functiona pin assignme Updated p GNSS functio Updated G GNSS Featu Updated G reference ci Updated r 21. in Figure 2 Added de escription o

. Chapter 4. Updated p pin definitio Table 21. of EG95-NA al diagram in ent in Figure on in Table 1 res in Table rcuit of USB A. n Figure 1. e 2. 1. 2. B interface of GNSS r receiver in on of RF a antenna in LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 9. 10. 11. 12. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. Updated m Table 22. Added d interface in Updated a Updated R Added v information Updated fu Updated Figure 2. Updated p Updated s Figure 8. Updated th the module Updated t 12. Updated r with periph Updated G Updated m Table 22. Updated G Updated a Updated E Table 30. Adeed EG Table 31. Updated E sensitivity Updated E sensitivity Added EG sensitivity current co 32.Update 38.Update interface in Updated d 3.9. Updated d 3.11. Added de module ope erating freq uencies in antenna escription n Chapter 5. antenna requ RF output po of GNSS

.2. uirements in ower in Table Table 25. e 32. 95-EX an d related variant EG n. unctional dia pin assign agram in Fig nment (top gure 1. view) in pin descriptio star structu on in Table 4 re of powe 4. er supplyin he referenc e using PWR the power-o ce circuit of RKEY in Fig on scenario turning on gure 10. in Figure reference ci herals in Fig GNSS perfor module ope ircuit of SP ure 25. rmance in Ta erating freq PI interface able 20. uencies in GNSS freque antenna requ EG95-NA cu ency in Table uirements in urrent cons e 24. Table 25. umption in G95-EX cu rrent consu umption in EG95-E con nducted RF in Table 34. EG95-NA co onducted RF in Table 35. nducted RF G95-EX con 36.Update in Table onsumption of EG95 documents ed related ed reference e circuit of n Figure 10. of (U)SIM i description F receiving F receiving F receiving ed GNSS in Table in Table PWRKEY in Chapter description of UART i n Chapter escription o of ADC in nterface in 1.3 2019-05 5-24 Ward WANG/

W

N athan LIU/

Rex WANG R es_Hardwa are_Design 4 4 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 1.4 2019-07

-05 W Ward WANG 1.5 2019-08

-09 anny CHEN F R Rex WANG N/

1.6 2019-11-

-07 W Ward WANG 1.7 2020-04

-15 W Ward WANG 21. 22. Chapter 3. Added des in Chapter Updated d soldering i

.16. scription of r 3.18. description n Chapter 8 USB_BOOT T interface of manufac 8.2. cturing and upported pr ming of turn rotocols (Tab ning on mod ble 2). ule (Figure Updated s Updated ti 12). DFOTA is Updated interface a emergency and Figure Added Th updated re Chapter 2.2 Updated frequencies Updated an Added EG95-NAX Updated R Updated E sensitivity (

Added EG sensitivity(T Removed OS. Updated th

(Table 2) Updated th

(Chapter 4. Updated th the receive Updated

(Chapter 3. Updated interface (C Added the package w conforms to Updated

(Chapter 8. Updated developed. of U n descriptio sequence fo and timing s y download mode (Ch e 29). SB_BOOT or entering apter 3.18 readX mod elated conte 2, 2.3, 3.2 a mod s(Table 25). ntenna requ current X(Table 35). F output pow EG95-NAcon

(Table 39). 95-NAX co Table 41). dule EG95-

ents (Table nd 5). dule

-NAX and 1 and 4, operating irements (Ta consumpt able 28). tion of wer(Table 37 nducted RF 7). F receiving nducted RF F receiving related info ormation of f ThreadX he supporte ed USB ser rial drivers he notes fo

.2). e AT comma e diversity (C or GNSS pe erformance and be used Chapter 5.1.3 d to disable 3). of airpla ane mode s of ma 1). description

.5.2). thefunctions Chapter 3.11 note about le warpage evel of 7.1). o (Chapter 7 storage module

.1). ain UART the standa th rd that the e module nformation i module manufactur ring and 1. 2. 3. 4. 1. 2. 3. 4. 5. 6. 7. 1. 2. 3. 4. 1. 2. 3. 4. 5. es_Hardwa are_Design 5 5 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n soldering in nformation (C Chapter 8.2

). 1.8 2020-08

-24 F rank WANG G Add 36 a ded EG95-AU and43). UX and relat ted informatio on (Table 1, es_Hardwa are_Design 6 6 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Contents s 3 Applic 2.1. 2.2. 2.3. 2.4. 3.1. 3.2. 3.3. 3.4. 3.5. About the D Document . ................. .................. .................. .................. .................. .................. ................. Contents ... .................. ................. .................. .................. .................. .................. .................. ................. Table Index x ................ ................. .................. .................. .................. .................. .................. ............... 1 3 7 0 Figure Inde ex ............... ................. .................. .................. .................. .................. .................. ............... 12 2 1 Introdu 1.1. uction ........ Safety Info

.................. rmation ...... .................. .................. .................. .................. .................. ................. .................. ................. .................. .................. ............... 14 4 7

................ 1 2 Produc ct Concept General De Key Featur Functional Evaluation

.................. escription ... res .............. Diagram .... Board ........ .................. .................. .................. .................. .................. .................. .................. .................. .................. .................. .................. ................. ................. ................. ................. .................. ................. ................. ................. ................. .................. .................. .................. .................. .................. ............... 19 9

................ 1 9 0

................ 2 3

................ 2

................ 24 4 ation Interf General De Pin Assignm Pin Descrip Operating M Power Sav 5.1. Sleep 3.5 3.5.1.1. 3.5.1.2. 3.5.1.3. 3.5.1.4. 3.6. 3.7. 3.5 5.2. Airpla Power Sup 6.1. Powe 6.2. Decre 6.3. Refer 6.4. Monit Power-on/o Turn Turn 7.1. 7.2. 3.6 3.6 3.6 3.6 3.7 3.7 3.7.2.1. 3.7.2.2. 3.8. 3.9. 3.10. 3.11. 3.12. Reset the M

(U)SIM Inte USB Interfa UART Inter PCM and I2 faces .......... escription ... ment .......... ption ........... Modes ....... ving ............. p Mode....... UART App USB Appli USB Appli USB Appli ane Mode ... pply ............. er Supply Pi ease Voltag rence Desig tor the Powe off Scenarios on Module U off Module . Turn off M Turn off M Module ....... erfaces ....... ace ............. rfaces ......... 2C Interface

................... .................. .................. .................. .................. .................. .................. plication ....... cation with U cation with U cation witho

................... .................. ns ............... e Drop ........ gn for Power er Supply .... s ................. Using the PW

................... odule Using odule Using

................... .................. .................. .................. es ................ .................. .................. .................. .................. .................. .................. .................. .................. USB Remot USB Suspen out USB Sus

................... .................. .................. .................. r Supply ...... .................. .................. WRKEY ..... .................. g the PWRK g AT Comma

................... .................. .................. .................. .................. .................. ................. ................. ................. ................. ................. ................. ................. e Wakeup F nd/Resume spend Funct

.................. ................. ................. ................. ................. ................. ................. ................. ................. EY Pin ....... and ............. ................. ................. ................. ................. ................. .................. ................. ................. ................. ................. ................. ................. ................. Function ..... and RI Fun tion ............. ................. ................. ................. ................. ................. ................. ................. ................. ................. ................. ................. ................. ................. ................. ................. ................. .................. .................. .................. .................. .................. .................. .................. .................. .................. ction ........... .................. .................. .................. .................. .................. .................. .................. .................. .................. .................. .................. .................. .................. .................. .................. .................. .................. ............... 2 5

................ 2 5

................ 26 6 7

................ 2

................ 34 4 5

................ 3 5

................ 3 5

................ 3

................ 36 6

................ 36 6 7

................ 3 8

................ 3 8

................ 3 8

................ 3 9

................ 3 0

................ 4 1

................ 4 1

................ 4 1

................ 4 3

................ 4 3

................ 4 3

................ 4

................ 44 4 5

................ 4 8

................ 4 9

................ 4

................ 52 2 es_Hardwa are_Design 7 7 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 3.13. 3.14. 3.15. 3.16. 3.17. 3.18. SPI Interfac Network St STATUS ... ADC Interfa Behaviors o USB_BOO ce .............. tatus Indicat

.................. ace ............ of RI .......... T Interface . .................. tion ............. .................. .................. .................. .................. .................. .................. .................. .................. .................. .................. ................. ................. ................. ................. ................. ................. ................. ................. ................. ................. ................. ................. .................. .................. .................. .................. .................. .................. ............... 54 4 5

................ 5

................ 56 6 7

................ 5 7

................ 5 8

................ 5 4 GNSS Receiver ... General De GNSS Perf Layout Gui

.................. escription ... formance ... delines ...... .................. .................. .................. .................. .................. .................. .................. .................. .................. ................. ................. ................. .................. ................. ................. ................. .................. .................. .................. .................. ............... 6

................ 6

................ 6

................ 6 0 0 0 1 5 Antenn 5.1 5.1 5.1 5.1 na Interface Main/Rx-div 1.1. Pin D 1.2. Oper 1.3. Refer 1.4. Refer GNSS Ante Antenna In 3.1. Anten 3.2. Reco es ............... versity Ante Definition ..... rating Freque rence Desig rence Desig enna Interfac stallation ... nna Require ommended R

................... enna Interfac

................... ency ........... gn of RF Ant gn of RF Lay ce ............... .................. ement .......... RF Connecto

................... ces.............. .................. .................. enna Interfa yout ............. .................. .................. .................. or for Anten

................... ................. ................. ................. ace ............. ................. ................. ................. ................. na Installatio

................... ................. ................. ................. ................. ................. ................. ................. ................. on .............. .................. .................. .................. .................. .................. .................. .................. .................. .................. .................. ............... 62 2

................ 62 2

................ 62 2

................ 62 2 3

................ 6

................ 64 4

................ 66 6 7

................ 6 7

................ 6 8

................ 6 5.3 5.3 6 Electri cal, Reliabi Absolute M Power Sup Operation a Current Co RF Output RF Receivi Electrostati Thermal Co ility and Ra Maximum Ra pply Ratings and Storage onsumption . Power ....... ing Sensitivi ic Discharge onsideration dio Charac atings .......... .................. e Temperatu

................... .................. ity ............... e ................. n .................. cteristics .... .................. .................. res ............. .................. .................. .................. .................. .................. .................. ................. ................. ................. ................. ................. ................. ................. ................. .................. ................. ................. ................. ................. ................. ................. ................. ................. .................. .................. .................. .................. .................. .................. .................. .................. .................. 0

................ 7 0

................ 7 0

................ 7 1

................ 7

................ 72 2 3

................ 8 3

................ 8 7

................ 8 7

................ 8 7 Mecha nical Dimen Mechanica Recommen Top and Bo nsions....... l Dimension nded Footpr ottom Views

................... ns of the Mod rint ............... of the Modu

................... dule............ .................. ule .............. .................. ................. ................. ................. .................. ................. ................. ................. .................. .................. .................. .................. ............... 9

................ 9

................ 9

................ 9 8 Storag ge, Manufac Storage .... Manufactur Packaging cturing and

.................. ring and Sol

.................. Packaging

................... ldering ........ .................. ................. .................. .................. .................. .................. ................. ................. ................. .................. ................. ................. ................. .................. .................. .................. .................. ............... 9

................ 9

................ 9

................ 9 4.1. 4.2. 4.3. 5.1. 5.2. 5.3. 6.1. 6.2. 6.3. 6.4. 6.5. 6.6. 6.7. 6.8. 7.1. 7.2. 7.3. 8.1. 8.2. 8.3. 9 Appen dix A Refer rences ....... .................. .................. .................. .................. .................. ............. 102 2 10 Appen dix B GPRS S Coding S chemes ..... .................. .................. .................. .................. ............. 10 11 Appen dix C GPRS S Multi-slot t Classes .... .................. .................. .................. .................. ............. 10 0 0 3 5 7 7 8 9 6 7 es_Hardwa are_Design 8 8 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 12 Appen dix D EDGE E Modulatio on and Cod ding Schem es .............. .................. .................. ............. 109 9 es_Hardwa are_Design 9 9 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Table In dex Table 1: Freq quency Band ds of EG95 S Series Modu le ................ ................... ................... .................. Table 2: Key y Features of f EG95 Modu ule................ ................... ................... ................... .................. Table 3: IO P Parameters D Definition ..... ................... ................... ................... ................... .................. Table 4: Pin Description . ................... ................... ................... ................... ................... .................. Table 5: Ove erview of Ope erating Mode es ................ ................... ................... ................... .................. Table 6: Pin Definition of f VBAT and G GND Pins ..... ................... ................... ................... .................. Table 7: Pin Definition of f PWRKEY .. ................... ................... ................... ................... .................. Table 8: Pin Definition of f RESET_N . ................... ................... ................... ................... .................. Table 9: Pin Definition of f (U)SIM Inte erfaces ......... ................... ................... ................... .................. Table 10: Pin n Definition o of USB Interf face ............. ................... ................... ................... .................. Table 11: Pin n Definition o of Main UAR T Interfaces . ................... ................... ................... .................. Table 12: Pin n Definition o of Debug UA ART Interface e .................. ................... ................... .................. Table 13: Lo ogic Levels o f Digital I/O . ................... ................... ................... ................... .................. Table 14: Pin n Definition o of PCM and I2C Interface es ................ ................... ................... .................. Table 15: Pin n Definition o of SPI Interfa ace ............... ................... ................... ................... .................. Table 16: Pin n Definition o of Network S Status Indicat tor ............... ................... ................... .................. Table 17: Wo orking State of Network S Status Indica ator .............. ................... ................... .................. Table 18: Pin n Definition o of STATUS .. ................... ................... ................... ................... .................. Table 19: Pin n Definition o of ADC Interf face ............. ................... ................... ................... .................. Table 20: Ch haracteristics s of ADC Inte erface ........... ................... ................... ................... .................. Table 21: De efault Behavi iors of RI ..... ................... ................... ................... ................... .................. Table 22: Pin n Definition o of USB_BOO OT Interface . ................... ................... ................... .................. Table 23: GN NSS Perform mance .......... ................... ................... ................... ................... .................. Table 24: Pin n Definition o of RF Antenn nas ............... ................... ................... ................... .................. Table 25: Mo odule Operat ting Frequen ncies ............ ................... ................... ................... .................. Table 26: Pin n Definition o of GNSS Ant tenna Interfa ce ............... ................... ................... .................. Table 27: GN NSS Frequen ncy .............. ................... ................... ................... ................... .................. Table 28: An ntenna Requ irements ..... ................... ................... ................... ................... .................. Table 29: Ab bsolute Maxim mum Ratings s .................. ................... ................... ................... .................. Table 30: Po ower Supply Ratings ....... ................... ................... ................... ................... .................. Table 31: Op peration and Storage Tem mperatures .. ................... ................... ................... .................. Table 32: EG G95-E Curre nt Consumpt tion .............. ................... ................... ................... .................. Table 33: EG G95-NA Curr rent Consum mption ........... ................... ................... ................... .................. Table 34: EG G95-EX Curr rent Consum mption ........... ................... ................... ................... .................. Table 35: EG G95-NAX Cu urrent Consu mption ......... ................... ................... ................... .................. Table 36: EG G95-NAXD C Current Cons sumption ...... ................... ................... ................... .................. Table 37: EG G95-AUX Cu urrent Consu mption ......... ................... ................... ................... .................. Table 38: GN NSS Current t Consumptio on of EG95 .. ................... ................... ................... .................. Table 39: RF F Output Pow wer .............. ................... ................... ................... ................... .................. Table 40: EG G95-E Condu ucted RF Re eceiving Sens sitivity .......... ................... ................... .................. Table 41: EG G95-NA Cond ducted RF R Receiving Se nsitivity ....... ................... ................... .................. Table 42: EG G95-EX Cond ducted RF R Receiving Se nsitivity ....... ................... ................... .................. ............... 19 9

................ 20 0

................ 27 7

................ 27 7

................ 34 4

................ 38 8

................ 41 1

................ 44 4

................ 46 6

................ 48 8

................ 50 0

................ 50 0

................ 50 0

................ 53 3

................ 54 4

................ 55 5

................ 55 5

................ 56 6

................ 57 7

................ 57 7

................ 58 8

................ 58 8

................ 60 0

................ 62 2

................ 62 2

................ 66 6

................ 66 6

................ 67 7

................ 70 0

................ 70 0

................ 71 1

................ 72 2

................ 74 4

................ 75 5

................ 77 7

................ 78 8

................ 79 9

................ 82 2

................ 83 3

................ 83 3

................ 84 4

................ 84 4 es_Hardwa are_Design 1 0 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Table 43: EG G95-NAX Co onducted RF Receiving S Sensitivity ..... ................... ................... .................. Table 44: EG G95-NAXD C Conducted R RF Receiving Sensitivity .. ................... ................... .................. Table 45: EG G95-AUX Co onducted RF Receiving S Sensitivity ..... ................... ................... .................. Table 46: Ele ectrostatic D Discharge Ch aracteristics

(25 C, 45%

Relative Hu midity) ........ .................. Table 47: Re ecommended d Thermal Pr rofile Parame eters ........... ................... ................... .................. Table 48: Re elated Docum ments .......... ................... ................... ................... ................... .................. Table 49: Te rms and Abb breviations ... ................... ................... ................... ................... .................. Table 50: De escription of Different Cod ding Scheme es ................ ................... ................... .................. Table 51: GP PRS Multi-slo ot Classes ... ................... ................... ................... ................... .................. Table 52: ED DGE Modula tion and Cod ding Scheme es ................. ................... ................... .................. ............... 85 5

................ 85 5

................ 86 6

................ 87 7

................ 99 9

.............. 102 2

.............. 102 2

.............. 106 6

.............. 107 7

.............. 109 9 es_Hardwa are_Design 1 1 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Figure In ndex Figure 1: Fu nctional Diag gram ........... ................... ................... ................... ................... .................. Figure 2: Pin n Assignmen nt (Top View)

.................... ................... ................... ................... .................. Figure 3: Sle eep Mode Ap pplication via a UART ........ ................... ................... ................... .................. Figure 4: Sle eep Mode Ap pplication wit th USB Rem ote Wakeup

.................... ................... .................. Figure 5: Sle eep Mode Ap pplication wit th RI ............ ................... ................... ................... .................. Figure 6: Sle eep Mode Ap pplication wit thout Suspen nd Function . ................... ................... .................. Figure 7: Po ower Supply Limits during g Burst Trans smission ...... ................... ................... .................. Figure 8: Sta ar Structure o of Power Su pply ............. ................... ................... ................... .................. Figure 9: Re eference Circ cuit of Power r Supply ....... ................... ................... ................... .................. Figure 10: T Turn on the M Module by Us sing Driving C Circuit .......... ................... ................... .................. Figure 11: Tu urn on the M Module by Us sing Keystrok ke ................ ................... ................... .................. Figure 12: T Timing of Turn ning on Mod ule ............... ................... ................... ................... .................. Figure 13: T Timing of Turn ning off Mod ule ............... ................... ................... ................... .................. Figure 14: R Reference Cir rcuit of RESE ET_N by Usi ing Driving C Circuit ........... ................... .................. Figure 15: R Reference Cir rcuit of RESE ET_N by Usi ing Button ... ................... ................... .................. Figure 16: T Timing of Res setting Modu le ................. ................... ................... ................... .................. Figure 17: R Reference Cir rcuit of (U)SI IM Interface with an 8-pin n (U)SIM Ca rd Connecto r ................. Figure 18: R Reference Cir rcuit of (U)SI IM Interface with a 6-pin

(U)SIM Card d Connector

................... Figure 19: R Reference Cir rcuit of USB Interface ..... ................... ................... ................... .................. Figure 20: R Reference Cir rcuit with Tra anslator Chip p ................... ................... ................... .................. Figure 21: R Reference Cir rcuit with Tra ansistor Circu uit ................ ................... ................... .................. Figure 22: P Primary Mode e Timing ...... ................... ................... ................... ................... .................. Figure 23: A Auxiliary Mod e Timing ..... ................... ................... ................... ................... .................. Figure 24: R Reference Cir rcuit of PCM and I2C App plication with h Audio Code ec ................ .................. Figure 25: R Reference Cir rcuit of SPI I nterface with h Peripherals s ................... ................... .................. Figure 26: R Reference Cir rcuit of Netw work Status In ndicator ....... ................... ................... .................. Figure 27: R Reference Cir rcuit of STAT TUS .............. ................... ................... ................... .................. Figure 28: R Reference Cir rcuit of USB_ _BOOT Inter rface ............ ................... ................... .................. Figure 29: T Timing Seque ence for Ente ering Emerge ency Downlo oad Mode ..... ................... .................. Figure 30: R Reference Cir rcuit of RF A Antenna Interf face ............ ................... ................... .................. Figure 31: M Microstrip Des sign on a 2-l ayer PCB .... ................... ................... ................... .................. Figure 32: C Coplanar Wav veguide Des sign on a 2-la ayer PCB ..... ................... ................... .................. Figure 33: C Coplanar Wav veguide Des sign on a 4-la ayer PCB (La ayer 3 as Ref ference Grou und) ............ Figure 34: C Coplanar Wav veguide Des sign on a 4-la ayer PCB (La ayer 4 as Ref ference Grou und) ............ Figure 35: R Reference Cir rcuit of GNS S Antenna ... ................... ................... ................... .................. Figure 36: D Dimensions o of the U.FL-R R-SMT Conne ector (Unit: m mm) .............. ................... .................. Figure 37: M Mechanicals o of U.FL-LP C Connectors .. ................... ................... ................... .................. Figure 38: S Space Factor r of Mated Co onnector (Un nit: mm) ....... ................... ................... .................. Figure 39: R Referenced H Heatsink Des sign (Heatsin k at the Top of the Modu le) ............... .................. Figure 40: R Referenced H Heatsink Des sign (Heatsin k at the Bac kside of Cus stomers PCB B)................. Figure 41: M Module Top a and Side Dim mensions ....... ................... ................... ................... .................. ............... 23 3

................ 26 6

................ 35 5

................ 36 6

................ 37 7

................ 37 7

................ 39 9

................ 40 0

................ 40 0

................ 41 1

................ 42 2

................ 42 2

................ 43 3

................ 44 4

................ 45 5

................ 45 5

................ 47 7

................ 47 7

................ 49 9

................ 51 1

................ 51 1

................ 52 2

................ 53 3

................ 54 4

................ 55 5

................ 56 6

................ 56 6

................ 59 9

................ 59 9

................ 64 4

................ 65 5

................ 65 5

................ 65 5

................ 66 6

................ 67 7

................ 68 8

................ 69 9

................ 69 9

................ 88 8

................ 88 8

................ 90 0 es_Hardwa are_Design 1 2 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Figure 42: E EG95-E Modu ule Bottom D Dimensions (

Top View) ... ................... ................... .................. Figure 43: E EG95-EX Mod dule Bottom Dimensions

(Top View) . ................... ................... .................. Figure 44: R Recommende ed Footprint

(Top View) ... ................... ................... ................... .................. Figure 45: To Top View of th he Module ... ................... ................... ................... ................... .................. Figure 46: E EG95-E Botto om View of th he Module ... ................... ................... ................... .................. Figure 47: E EG95-EX Bot ttom View of the Module . ................... ................... ................... .................. Figure 46: R Recommende ed Reflow So oldering Ther rmal Profile . ................... ................... .................. Figure 49: Ta Tape Specific ations ......... ................... ................... ................... ................... .................. Figure 50: R Reel Specifica ations .......... ................... ................... ................... ................... .................. Figure 51: Ta Tape and Ree el Directions

.................... ................... ................... ................... .................. ............... 91 1

................ 92 2

................ 94 4

................ 95 5

................ 95 5

................ 96 6

................ 99 9

.............. 100 0

.............. 100 0

.............. 101 1 es_Hardwa are_Design 1 3 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n ntrod ductio on 1 In This docum are connect This docum mechanical in different application applications ment can he details as w fields, relev note and us s easily. ment defines ted with cus EG95 series tomers app smodule, an plications. nd describes s its air inter rface and ha ardware inter rfaces which h elp custome well as other vant referen ser guide, c rs quickly u r related info nce design i customers c understand ormation of E s also prov can use EG module inte EG95 series vided for cus 95 seriesmo erface speci s module. To stomers ref odule to de ifications, e o facilitate its ference.Ass esign and se lectrical and d s application n sociated with h et up mobile e According to o the definit ion of mobile e and fixed device is de escribed in P Part 2.1091(

b), this devi ce is a 1.1. FCC C Certific cation Re equireme ents. mobile devic ce. And the follo owing condi tions must b be met:

1. This Mod dular Approv val is limited to OEM inst tallation for m mobile and f fixed applica ations only. T The antenna a installation a and operatin ng configura ations of this s transmitter r, including a any applicab ble source-ba ased time-

averaging d duty factor, a antenna gain n and cable loss must sa atisfy MPE c categorical E Exclusion R equirements s of 2.1091. 2. The EUT is a mobile device; mai ntain at leas st a 20 cm se eparation be etween the E EUT and the e users body y and mus st not transm mit simultane eously with a any other an ntenna or tra ansmitter. 3.A label wit th the follow wing stateme ents must be e attached to o the host e nd product:

This device contains FCC ID: X XMR202008 8EG95NAXD D. 4.To comply y with FCC r regulations l imiting both maximum R RF output po ower and hu uman expos sure to RF radiation n, maximum antenna ga ain (including g cable loss

) must not e exceed:

es_Hardwa are_Design 1 4 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n WCDM WCDM WCDM LTE Ba LTE Ba LTE Ba LTE Ba LTE Ba LTE Ba LTE Ba MA II :8.00 MA IV :5.00 MA V :9.41 and 2 :8.00 and 4:5.00 and 5 :9.4 and 12 :8.7 and 13:9.1 and 25:8.0 and 26:9.4 0dBi 00dBi 6dBi 00dBi 00dBi 16dBi 734dBi 173dBi 000dBi 416dBi 5. This mod dule must no ot transmit si imultaneous sly with any other anten na or transm mitter 6. The host end produc ct must inclu de a user m manual that c clearly define es operating g requireme nts and conditions s that must be observed d to ensure c compliance with current t FCC RF ex xposure guid delines. For porta ble devices,

, in addition to the cond itions 3 thro ugh 6 descr ribed above,

, a separate approval is required t to satisfy the e SAR requi rements of FCC Part 2. 1093 If the dev vice is used f for other equ uipment tha t separate a approval is re equired for a all other ope erating configura tions, includ ding portable e configurati ons with res spect to 2.10 093 and diffe erent antenn na configura tions. For this device, OEM M integrator rs must be p provided with h labeling ins structions of f finished pr oducts. Please r refer to KDB B784748 D0 1 v07, sectio on 8. Page 6 6/7 last two paragraphs

A certifie ed modular h has the optio on to use a permanently y affixed lab bel, or an ele ectronic labe el. For a permane ently affixed label, the m module must t be labeled with an FCC C ID - Sectio on 2.926 (se ee 2.2 Certifica ation (labelin ng requireme ents) above)

). The OEM manual mu st provide c lear instruct tions explainin ng to the OE EM the label ing requirem ments, optio ns and OEM M user manu ual instructio ons that are required d (see next p paragraph). For a hos st using a ce ertified modu ular with a st tandard fixe d label, if (1

) the module es FCC ID is not visible e when inst talled in the host, or (2) if the host is s marketed s so that end users do no ot have straig ghtforward es_Hardwa are_Design 1 5 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n commonly y used meth hods for acc cess to remo ove the mod ule so that t the FCC ID o of the modu le is visible;

then an a dditional pe rmanent lab bel referring to the enclo sed module

:Contains T Transmitter M Module FCC C ID: XMR2 202008EG95 5NAXD or Contains FC CC ID: XMR R202008EG 95NAXD m must be used d. The host OEM use er manual m ust also con ntain clear in nstructions o on how end u users can fin nd and/or ac ccess the module a nd the FCC ID. The final host / modu ule combinat tion may als so need to be e evaluated against the FCC Part 1 15B criteria for uninte entional radia ators in orde er to be prop perly authori ized for ope ration as a P Part 15 digit tal device. The user s manual or r instruction manual for an intention nal or uninte ntional radia ator shall ca ution the user that changes or modification ns not expre essly approv ved by the p arty respons sible for com mpliance could void d the user's authority to operate the e equipment t. In cases w where the ma anual is prov vided only in n a form oth her than pap per, such as s on a compu uter disk or over the Inte ernet, the in formation re equired by this sectio on may be in ncluded in th he manual in n that alterna ative form, p provided the user can re easonably be e expected to have the e capability to o access inf formation in that form. This devic ce complies s with part 15 5 of the FCC C Rules. Ope eration is su ubject to the following tw wo conditions s:

(1) This d device may n not cause ha armful interf ference, and d (2) this dev vice must ac ccept any int terference received, including in nterference t that may cau use undesire ed operation n. r modificatio equipment. ons not expr ressly appro oved by the manufacture er could voi d the users s authority to o Changes or operate the EG95_Serie es_Hardwa are_Design 1 6 / 103 LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 1.2. Safe ety Inform mation The followin or repair of terminal sho these guide customers ng safety pre any cellular ould send th elines into a failure to co ecautions m r terminal or he following all manuals omply with th must be obse r mobile inco g safety info supplied w hese precau tions. erved during orporating E ormation to with the pro g all phases EG95series m users and o duct. If not of operatio module. Ma operating pe so, Quecte n, such as u anufacturers ersonnel, an elassumes usage, servi of the cellu nd incorpora no liability f ice lar ate for ull attention Fu ccident. Us ac straction an di re estricting the must be giv ing a mob nd can lead e use of wire ven to drivin bile while d to an accid eless devices ng at all time driving (eve ent. Please s while drivi es in order t n with a h comply with ng. o reduce the handsfree k h laws and e risk of an kit) causes regulations witch off the Sw f wireless a of ommunicatio co en nabled prior estrictions on re e cellular term appliances i on systems. r to boardin n the use of minal or mo in an aircra If the devic ng an aircra wireless de bile before b aft is forbid ce offers an aft. Please evices on bo boarding an den to pre Airplane M consult the arding the a aircraft. The vent interfe Mode, then it e airline staf aircraft. e operation erence with t should be ff for more Wireless dev W pl ease be aw ho ospitals,clini vices may c ware of the cs or other cause interf e restriction healthcare f ference on ns on the u facilities. sensitive m use of wire medical equ less device ipment, so es when in Ce ca un co ca ad ellular term annot be gu npaid bills or onditions, pl all, the cellu dequate cell inals or mo uaranteed t r with an inv ease remem ular termina ular signal s obiles opera o connect valid (U)SIM mber using e l or mobile strength. ating over ra in all possi card). Whe emergency must be sw adio signals ble conditio n emergent call. In orde witched on s and cellul ons (for exa help is need er to make o in a service lar network ample, with ded in such or receive a e area with he cellular te Th eceives and re us sed close to erminal or m transmits ra TV set, rad mobile contai adio frequen io, compute ins a transm ncy signals. er or other el mitter and rec

. RF interfer lectric equip ceiver. When rence can o pment. n it is ON, it occur if it is es_Hardwa are_Design 1 7 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n n locations w In ff wireless d of po otentially ex uel or chem fu ch hemicals or with potentia devices suc xplosive atm mical transfe particles suc ally explosiv ch as your p mospheres in er or stora ch as grain, ve atmosphe phone or ot nclude fuelli age facilities dust or met eres, obey a ther cellular ing areas, b s, areas wh tal powders, all posted si r terminals. below decks here the a

, etc. gns to turn Areas with s on boats, ir contains es_Hardwa are_Design 1 8 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Produ uct Co oncep pt 2.1. Gen neral Des scription 2 P EG95series supportsLTE LTE-FDD,D voice functi EG95-E, EG frequency b Module EG95-E EG95-NAX XD 1. NOTES EG95_Serie s module is E-FDD/WCD DC-HSDPA, ionality1)to m G95-NA, EG bands of EG s an embed DMA/GSM HSPA+, HS meet custom G95-EX, EG 95series mo dded 4G w wireless SDPA, HSUP mers specif G95-NAX,EG odule. wireless com communica PA, WCDMA fic applicatio G95-NAXD a mmunication ation, and A,EDGE and on demands and EG95-A module w provides d dGPRSnetw s.EG95 seri AUX.The fo with receive data conn works. It can ies contains llowing table diversity. I t nectivity on n also provide e s 6 variants s:

e shows the e Table 1: Fre equency Ba ands of EG G95Series M Module Bands Rx-diversit ty) W WCDMA

(w with Rx-div versity) G GSM GNSS S2) 3/B7/B8/B20 0/B28A B B1/B8 90 00/1800 MH Hz Not su upported EG95-NA B B2/B4/B5 N ot supported d 4/B5/B12/B1 13 EG95-EX B B1/B8 90 00/1800 MH Hz 3/B7/B8/B20 0/B28 EG95-NAX X 4/B5/B12/B1 13/B25/

B B2/B4/B5 N ot supported d LTE B

(with FDD:

B1/B3 FDD:

B2/B4 FDD:

B1/B3 FDD:

B2/B4 B26 GPS, G BeiDo Galileo GLONASS, u/Compass,

, o, QZSS GPS, G BeiDo Galileo GLONASS, u/Compass,

, o, QZSS GPS, G BeiDo Galileo GLONASS, u/Compass,

, o, QZSS EG95-AUX X B7/B8 B1/B2/B5/B8 B 8 FDD:

B1/B2 B28/B 2/B3/B4/B5/

B66 85 90 50/900/1800 00 0/1 GPS, G BeiDo Galileo GLONASS, u/Compass,

, o, QZSS 1) EG95 data fu 5 contains T nctions, whi elematics v ile Data-onl version and y version on Data-only v nly supports version. Tele data functio ematics ver on. rsion suppor rts voice and d es_Hardwa are_Design 1 9 / 103 LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 2. 2) GNSS S function is s optional. pact profile s such as au device, PDA of 29.0mm utomotive, s A phone, tab 25.0mm mart meteri blet PC, etc. 2.3mm, EG ng, tracking G95 can mee system, se et almost al curity, route ll requireme er, wireless P ents for M2M M POS, mobile e SMD type m module whic ch can be em mbedded int to applicatio ns through i its 106 LGA pads. egrated with oped for cus h internet ser stomers to u rvice protoco use these int ols like TCP ternet servic P, UDP and P ce protocols PPP. Extend easily. ded AT com mands have e With a com applications computing d EG95 is an EG95 is inte been develo The followin 2.2. Key y Feature es ng table des cribes the d etailed featu ures of EG9 95 module. Table 2: Ke ey Features s of EG95 M Module Features Desc cription Power Sup pply Supp Typic ply voltage:

cal supply v 3.34.3V voltage: 3.8V V Transmittin ng Power LTE Featu ures UMTS Fea atures Clas Clas Clas Clas Clas Clas Clas Clas Clas Clas s 4 (33dBm s 4 (33dBm s 1 (30dBm s 1 (30dBm s E2 (27dBm s E2 (27dBm s E2 (26dBm s E2 (26dBm s 3 (24dBm s 3 (23dBm 2dB) for G 2dB) for E 2dB) for D 2dB) for P m3dB) for m3dB) for m3dB) for m3dB) for

+1/-3dB) for 2dB) for LT SM850 GSM900 CS1800 CS1900 GSM850 8-

EGSM900 8 DCS1800 8 PCS1900 8-

r WCDMA b TE-FDD ban Supp Supp Supp FDD port up to no port 1.4/3/5/

port MIMO in D: Max 150 M on-CA Cat 4

/10/15/20 MH n DL directio Mbps (DL)/M 4 FDD Hz RF band on Max 50 Mbps PSK 8-PSK

-PSK

-PSK bands nds dwidth Supp Supp DC-H HSU WCD port 3GPP R port QPSK, HSDPA: Ma UPA: Max 5.7 DMA: Max 3 R8 DC-HSD 16-QAM an x 42 Mbps (

76 Mbps (UL 384 kbps (DL PA, HSPA+

d 64-QAM m

(DL) L) L)/ Max 384 s (UL)

, HSDPA, H modulation kbps (UL) GSMFeatu ures R99:

es_Hardwa are_Design 2 20 / 103 EG95_Serie HSUPA and W WCDMA LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Internet Pr rotocol Featu ures

(U)SIMInte erfaces Supp port 1.8 V an nd 3.0 V (U)

)SIM cards multi-slot cla

: CS-1, CS-2 DL), Max 85 ass 33(33 by 2, CS-3 and 5.6 kbps (UL L) y default) CS-4 multi-slot cla and 8-PSK ass 33(33 by K for differe y default) ent MCS (M Modulation and Coding g g schemes: M chemes: MC DL)/Max 236 MCS 1-9 CS 1-9 6.8 kbps (UL L) P/FTPS/HTT MTPS/MMS Authenticatio Protocol) pr TP/HTTPS/N S*/FILE*prot n Protocol) rotocols whi NTP/PING/Q tocols QMI/NITZ/

and CHAP ich are usua P (Challenge e r ally used fo CSD GPR Supp Codi Max D: 9.6 kbps RS:

port GPRS m ing scheme:

107 kbps (D EDG Supp Supp Sche Dow Uplin Max GE:

port EDGE m port GMSK eme) wnlink coding nk coding sc 296 kbps (D Supp SMT Supp Hand PPP DP/PPP/FTP portTCP/UD TT/CMUX/S TP/SSL/MQT Password A port PAP (P dshake Auth hentication s connection modes Text Poin SMS SMS and PDU m t-to-point M S cell broadc S storage: M O and MT cast ME by default t terface: PCM M interface MR-WB Supp GSM WCD LTE:

Supp port one dig M: HR/FR/EF DMA: AMR/A AMR/AMR-

port echo ca ital audio int FR/AMR/AM AMR-WB

-WB ancellation a and noise su uppression odec function with near data fo me synchro and slave h external co ormat onization and modes, but d short fram must be th e synchroni he master in zation n long frame e ecification (s slave only);th he data trans sfer rate can n Used Supp Supp Supp sync d for audio f port 16-bit lin port long fra port master chronization mpliant with U h up to 480 d for AT co ences outpu Com reac Used sente B USB Supp portUSB ser 5.x/6.x/7.x/8. 4.x/5 Main Used Baud Supp n UART:

d for AT com d rates reac port RTS an USB 2.0 spe Mbps rial drivers f

.x/9.x, etc. USB Interf face ommand com ut,software mmunication debugging, n, data tran firmware u nsmission,G upgrade and NSS NMEA A r d voice ove for:Windows s 7/8/8.1/10,

, Linux 2.6 5.4, Android d mmand com h up to 9216 d CTS hard munication a 600bps, 115 ware flow co and data tra 5200bps by d ontrol ansmission default es_Hardwa are_Design 2 21 / 103 SMS Audio Feat tures PCM Interf face UART Inte erface EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n log output Debu Used 1152 ug UART:

d for Linux c 200bps baud console and d rate Prov perip Dedi 1.8 V vides a dup pheral devic icated to one Voperation v lex, synchro es. e-to-one con voltage with onous and serial comm munication l link with the e nnection, wi clock rates thout chip s up to 50MH Hz. election. Gen8 Proto Data 8C Lite of Q ocol: NMEA a update rate Qualcomm A 0183 e: 1Hz by de efault Com comm mands mpliant with 3GPP TS 27.007, 27 7.005 and Quectel en nhanced AT T SPI Interfa ace GNSS Fea atures AT Comma ands Rx-diversit ty Supp port LTE/WC CDMA Rx-d iversity Network In ndication NET TLIGHTpin fo or network a activity status s indication Antenna In nterfaces Inclu

(ANT uding main T_DIV) inter antenna i rface and GN interface (A NSS antenn ANT_MAIN) a interface (

, Rx-divers

(ANT_GNSS sity antenna a S)1) Physical C Characteristic cs Size Pack Weig

: (29.00.15 kage: LGA ght: approx. 3.8g 5)mm (25.0 00.15)mm

(2.30.2)m mm Temperatu ure Range Oper Exte Stora ration tempe nded tempe age tempera erature rang erature range ature range:

ge: -35C to e: -40C to +

-40Cto +9

+75C 2)

+85C 3) 0C Firmware U Upgrade USB B interface or r DFOTA All h ardware com mponents ar re fully comp pliant with E EU RoHS dir rective antenna int operationte n extended SMS, data t o no effects ut might red to normal o terface is on emperature r temperature transmission s on radio sp duce in their operationtem nly supported range, the m e range, the n, emergenc pectrum and r value and mperature le d on EG95-N module is 3G e module re cy call*, etc. d no harm to exceed the vels, the mo NA/-EX/-NA GPP complia emains the There is no o radio netw e specified odule will me AX/-AUX. ant. ability to es o unrecover work. Only o tolerances. eet 3GPP sp stablish and rable malfun one or more When the pecifications d maintain a a nction. There e e parameters s temperature e sagain. ns under dev velopment. es_Hardwa are_Design 2 22 / 103 RoHS NOTES 1. 1) GNSS 2. 2) Within 3. 3) Within voice, S are als like Pou returns 4. * mean EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n ng figure sho ows a block diagram of EG95 and i llustrates the e major func ctional parts s. 2.3. Fun ctional D Diagram The followin Power Baseba DDR+N Radio f Periphe nt managemen and NAND flash frequency eral interface es VBAT_RF VBAT_BB PWRKEY RESET_N STATUS ANT_MAIN ANT_GNS SS 1) V ANT_DIV PAM SAW W Switch Duplexe er LNA A P PA Tx PRx SAW W GPS Transceive er SAW DRx IQ Q Control NAND DDR2 SDRAM PMIC C Control l 19

.2M X XO Base eband VDD_EX XT USB

(U)S SIM1

(U)SIM2 PC CM I2C SP PI UART GPIO Os Figure 1:

Functiona l Diagram NOTE EG95_Serie 1) GNSS ant tenna interfa ace is only s supported on n EG95-NA/

/-EX/-NAX/-A AUX. es_Hardwa are_Design 2 23 / 103 LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 2.4. Eva luation B Board In order to

(UMTS&LTE module.For o help custo E EVB), US more detail omers deve SB data cab s, please re elop applica ble, earpho efer to docum ations with ne, antenna ment [7]. EG95,Quec a and other ctel supplie r peripherals es an evalu s to control uation board d l or test the e es_Hardwa are_Design 2 24 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Applic cation n Inte erface es 3.1. Gen neral Des scription 62 SMT pa The sub adsand44-pin bsequent n ground/re chapters served pads will provid s that can b dedetailed be connecte description ed to cellula r the ns of e uipped with platform. nctions/interf faces. supply interfaces terface interfaces nd I2C interf erface ndication BOOT interfa faces ace 3 A EG95is equ application followingfun Power

(U)SIM USB in UART i PCMan SPI inte Statusi USB_B EG95_Serie es_Hardwa are_Design 2 25 / 103 LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 3.2. Pin Assignm ment The followin ng figure sho ows the pin assignment of EG95 mo odule.

) X U A

X A N

X E

A N

5 9 G E

I V D _ T N A

) E

5 9 G E n o 6 5 i n P

D E V R E S E R I I N N A A M M _ T T N N A A D N G D N G D N G D N G C N F F R R _ T T A A B B V V F R _ T A B V D N G D N G D N G C N 103 106 2 6 1 6 0 0 6 6 9 5 85 7 5 6 5 5 5 4 5 3 3 5 5 2 5 1 5 0 5 5-NA/-EX/-NAX/-AUX ANT _GNSS (EG95 X) ANT _DIV (EG95-E E) NC NC G GND PCM_C CLK PCM_SY YNC PCM_ DIN PCM_DO OUT USB_VB BUS USB_ _DP USB_ _DM NC NC NC NC NC PWRKE EY 1 ) RESET T _N RESERV VED 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 9 9 10 0 11 1 12 2 13 3 14 4 15 5 16 6 17 7 18 8 82 81 80 79 102 101 1 100 99 63 83 USIM2_PRES SENCE 64 84 USIM2_CLK 98 97 78 77 65 85 USIM2_RST 96 76 66 86 USIM2_DATA A 95 75 USB_B BOOT 67 87 USIM2_VDD 94 74 68 88 93 73 89 90 0 91 92 69 70 0 71 72 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 9 1 0 2 1 1 2 2 2 2 3 2 4 2 5 2 6 2 7 2 8 8 2 2 9 2 0 3 1 3 104 105 GND USIM_GND USIM1_CLK USIM1_DATA USIM1_RST USIM1_VDD USIM1_PRESENC E I2C_SDA I2C_SCL RI DCD RTS CTS TXD RXD VBAT _BB VBAT _BB Y D A E R _ P A S U T A T S I I T T H H G G L L T T E E N N D X R _ G B D D X T _ G B D 0 C D A D E V R E S E R K L C _ P S I I S O M _ I P S I I O O S S M M _ P P S S I I T X E _ D D V R T D D N G POWER USB UART T

(U) SIM PCM SPI ANT GND NC RE ESERVED OTHER RS Fi gure 2: Pin n Assignme ent (Top Vie ew) es_Hardwa are_Design 2 26 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n NOTES 1)PWRK 1. 2. Keep a 3. GND pa 4. Please EG95-N KEY output all RESERVE ads should note that th NA/-EX/-NA voltage is 0 EDpins and be connecte he definition AX/-AUX. Fo

.8V because unused pins ed to ground of pin 49 an r more detai e of the diod s unconnect d in the desig nd 56 are dif ils, please re de drop in th ted. gn. fferent amon efer to Table ng EG95-E a e 4. and he Qualcomm m chipset. 3.3. Pin Descript tion The followin Table 3: IO Parameter rs Definition n ng tables sho ow the pin d definition of EG95 modu ule. Type AI AO DI DO IO OD PI PO Des scription Ana alog Input Ana alog Output Dig ital Input Dig ital Output Bidi irectional Ope en Drain Pow wer Input Pow wer Output Table 4: Pin n Descriptio on Power Su pply Pin Name Pin No. I/O Descript tion DC Character ristics Comment VBAT_BB 32, 33 PI upply for Power su s modules d part baseband Vmax = 4. Vmin = 3.3 Vnorm = 3 3V 3V 3.8V It must be p sufficient cu 0.8A. providedwith h urrent up to es_Hardwa are_Design 2 27 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n VBAT_RF 52, 53 PI Power su modules upply for s RF part Vmax = 4. Vmin = 3.3 Vnorm = 3 3V 3V 3.8V VDD_EXT T 29 PO Provide 1 external c 1.8 V for circuit Vnorm = 1 IOmax = 50

.8 V 0mA It must be p sufficient cu 1.8A in a bu transmissio provided with h urrent up to urst n. Power supp external GP circuits. If unused, k ply for PIOs pull up p

. keep it open GND Ground 8, 55, 61, 74, 3, 31, 48 50, 54, 5 58, 59, 6 62, 677 7982, 8991, 100106 6 Power-on/

/off Pin Name Pin No o. I/O Descript tion DC Chara acteristics Comment t PWRKEY 15 DI off the Turn on/o module VH = 0.8V RESET_N 17 DI gnal of the Reset sig module VIHmax =

VIHmin = 1 VILmax = 0 2.1V 1.3V 0.5V The outpu 0.8 V beca diode drop Qualcomm ut voltage is ause of the p in the m chipset. 1.8 V Pull-up to internally. Activelow. keep it If unused, open. Pin Name Pin No o. I/O Descript tion DC Chara acteristics Comment t the s operation Indicate t modules status Indicate t modules activity st the s network tatus VOHmin =

VOLmax =

1.35V 0.45V VOHmin =

VOLmax =

1.35V 0.45V er domain. keep it wer domain. keep it 1.8 Vpowe If unused, open. 1.8 V pow If unused, open. Status Ind dication STATUS 20 DO NETLIGHT T 21 DO USB Interf face Pin Name Pin No o. I/O Descript tion DC Chara acteristics Comment t USB_VBU US 8 PI nection USB con detection n Vmax = 5. Vmin = 3.0 Vnorm = 5

.25V 0V 5.0 V 0 V keep it Typical:5.0 If unused, open. es_Hardwa are_Design 2 28 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n USB_DP 9 IO USB_DM 10 IO

(U)SIM Int terfaces USB diffe data bus erential

(+) USB diffe data bus erential

(-) USB 2.0 C Require d impedanc Compliant. ifferential ce of 90 . USB 2.0 C Require d impedanc Compliant. ifferential ce of 90 . Pin Name Pin N No. I/O Descript tion DC Chara acteristics Comment t USIM_GN D 47 Specified for (U)SIM d ground M card USIM1_VD DD 43 PO Power su

(U)SIMca upply for ard Either 1.8 is support module au V or 3.0 V ted by the utomatically. 0mA

(U)SIM:

.9V 7V IOmax = 5 For 1.8 V Vmax = 1. Vmin = 1.7 For 3.0 V Vmax = 3. Vmin = 2.7

(U)SIM:

.05V 7V

(U)SIM:

0.6V 1.2V 0.45V 1.35V For 1.8 V VILmax = 0 VIHmin = 1 VOLmax =

VOHmin =

For 3.0 V VILmax = 1 VIHmin = 1 VOLmax =

VOHmin =

(U)SIM:

1.0V 1.95V 0.45V 2.55V

(U)SIM:

0.45V 1.35V For 1.8 V VOLmax =

VOHmin =

For 3.0 V VOLmax =

VOHmin =

(U)SIM:

0.45V 2.55V USIM1_DA ATA 45 IO Data sign

(U)SIMca nal of ard USIM1_CL LK 46 DO Clock sig

(U)SIMca gnal of ard es_Hardwa are_Design 2 29 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n wer domain. keep it 1.8 V pow If unused, open. Either 1.8 is support module au V or 3.0 V ted by the utomatically. USIM1_RS ST 44 DO Reset sig

(U)SIMca gnal of ard USIM1_ PRESENC CE 42 DI

(U)SIMca insertion ard detection USIM2_VD DD 87 PO Power su

(U)SIMca upply for ard USIM2_DA ATA 86 IO Data sign

(U)SIMca nal of ard USIM2_CL LK 84 DO Clock sig

(U)SIMca gnal of ard USIM2_RS ST 85 DO Reset sig

(U)SIMca gnal of ard For 1.8 V VOLmax =

VOHmin =

For 3.0 V VOLmax =

VOHmin =

(U)SIM:

0.45V 1.35V

(U)SIM:

0.45V 2.55V VILmin = -0 VILmax = 0 VIHmin = 1 VIHmax =

0.3V 0.6V 1.2V 2.0V

(U)SIM:

.9V 7V For 1.8 V Vmax = 1. Vmin = 1.7 For 3.0 V Vmax = 3. Vmin = 2.7 IOmax = 5

(U)SIM:

.05V 7V 0mA

(U)SIM:

0.6V 1.2V 0.45V 1.35V For 1.8 V VILmax = 0 VIHmin = 1 VOLmax =

VOHmin =

For 3.0 V VILmax = 1 VIHmin = 1 VOLmax =

VOHmin =

(U)SIM:

1.0V 1.95V 0.45V 2.55V

(U)SIM:

0.45V 1.35V For 1.8 V VOLmax =

VOHmin =

For 3.0 V VOLmax =

VOHmin =

(U)SIM:

0.45V 2.55V

(U)SIM:

0.45V 1.35V For 1.8 V VOLmax =

VOHmin =

For 3.0 V VOLmax =

VOHmin =

(U)SIM:

0.45V 2.55V es_Hardwa are_Design 3 30 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n USIM2_ PRESENC CE 83 DI

(U)SIMca insertion ard detection Main UAR RT Interface e VILmin = -0 VILmax = 0 VIHmin = 1 VIHmax =

0.3V 0.6V 1.2V 2.0V wer domain. keep it 1.8 V pow If unused, open. Pin Name Pin No o. I/O Descript tion DC Chara acteristics Comment t RI 39 DO Ring indi cator VOLmax =

VOHmin =

0.45V 1.35V DCD 38 DO Data carr rier n detection VOLmax =

VOHmin =

0.45V 1.35V CTS 36 DO Clear to s send RTS 37 DI Request to send DTR 30 DI minal Data term ready. Sleep mo control. ode TXD 35 DO Transmit data RXD 34 DI Receive data Debug UA ART Interfac ce VOLmax =

VOHmin =

0.45V 1.35V VILmin = -0 VILmax = 0 VIHmin = 1 VIHmax =

0.3V 0.6V 1.2V 2.0V VILmin = -0 VILmax = 0 VIHmin = 1 VIHmax =

0.3V 0.6V 1.2V 2.0V VOLmax =

VOHmin =

0.45V 1.35V VILmin = -0 VILmax = 0 VIHmin = 1 VIHmax =

0.3V 0.6V 1.2V 2.0V wer domain. keep it wer domain. keep it wer domain. keep it 1.8 V pow If unused, open. 1.8 V pow If unused, open. 1.8 V pow If unused, open. wer domain. keep it 1.8 V pow If unused, open. wer domain. y default. wakes up le. keep it wer domain. keep it 1.8 V pow Pull-up by Low level the modul If unused, open. 1.8 V pow If unused, open. wer domain. keep it 1.8 V pow If unused, open. Pin Name Pin No o. I/O Descript tion DC Chara acteristics Comment t DBG_TXD D 23 DO Transmit data DBG_RXD D 22 DI Receive data VOLmax =

VOHmin =

0.45V 1.35V VILmin = -0 VILmax = 0 VIHmin = 1 0.3V 0.6V 1.2V wer domain. keep it wer domain. keep it 1.8 V pow If unused, open. 1.8 V pow If unused, open. es_Hardwa are_Design 3 31 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n PCM Inter rface Pin Name Pin No o. I/O Descript tion DC Chara acteristics Comment t PCM_DIN 6 DI PCM dat a input PCM_DOU UT 7 DO PCM dat a output PCM_SYN NC 5 IO a frame nization PCM dat synchron signal PCM_CLK K 4 IO PCM cloc ck VIHmax =

2.0V VILmin = -0 VILmax = 0 VIHmin = 1 VIHmax =

0.3V 0.6V 1.2V 2.0V VOLmax =

VOHmin =

0.45V 1.35V VOLmax =

VOHmin =

VILmin = -0 VILmax = 0 VIHmin = 1 VIHmax =

0.45V 1.35V 0.3V 0.6V 1.2V 2.0V VOLmax =

VOHmin =

VILmin = -0 VILmax = 0 VIHmin = 1 VIHmax =

0.45V 1.35V 0.3V 0.6V 1.2V 2.0V wer domain. keep it 1.8 V pow If unused, open. wer domain. keep it 1.8 V pow If unused, open. wer domain. mode, it is signal. In de, it is an al. keep it 1.8 V pow In master an output slave mod input sign If unused, open. wer domain. mode, it is signal. In de, it is an al. keep it 1.8 V pow In master an output slave mod input sign If unused, open. al pull-up to equired. keep it al pull-up to equired. keep it An extern 1.8 V is re If unused, open. An extern 1.8 V is re If unused, open. I2C Interfa ace Pin Name Pin No o. I/O Descript tion DC Chara acteristics Comment t I2C_SCL 40 OD I2C_SDA 41 OD ADC Inter rface al clock. external I2C seria Used for codec al data. external I2C seria Used for codec Pin Name Pin No o. I/O Descript tion DC Chara acteristics Comment t ADC0 24 AI General p analog to purpose o digital Voltage ra 0.3V to VB ange:

BAT_BB keep it If unused, open. es_Hardwa are_Design 3 32 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n converter r Pin Name Pin No o. I/O Descript tion DC Chara acteristics Comment t SPI Interfa ace1) SPI_CLK 26 DO SPI_MOSI I 27 DO SPI_MISO O 28 DI RF Interfa aces gnal of SPI Clock sig interface VOLmax =

VOHmin =

0.45V 1.35V utput slave SPI Master o input of S interface VOLmax =

VOHmin =

0.45V 1.35V nput slave f SPI Master in output of interface VILmin = -0 VILmax = 0 VIHmin = 1 VIHmax =

0.3V 0.6V 1.2V 2.0V wer domain. keep it wer domain. keep it 1.8 V pow If unused, open. 1.8 V pow If unused, open. wer domain. keep it 1.8 V pow If unused, open. Pin Name Pin No o. I/O Descript tion DC Chara acteristics Comment t ANT_GNS SS AI GNSS an ntenna pad edance. keep it defined as on 50 impe If unused, open. The pin is ANT_DIV EG95-E. edance. keep it 50 impe If unused, open. Pin 56 is r EG95-E. reserved on ANT_DIV AI Receive antenna diversity pad ANT_MAIN N 60 IO Main ante enna pad 50 impe edance. Other Pins s Pin Name Pin N No. I/O Descript tion DC Chara acteristics Comment t AP_READ DY 19 DI Applicatio processo state dete on or sleep ection VILmin = -0 VILmax = 0 VIHmin = 1 VIHmax =

0.3V 0.6V 1.2V 2.0V wer domain. keep it 1.8 V pow If unused, open. es_Hardwa are_Design 3 33 / 103 EG95_Serie 49

(EG95-

NA/-EX X/

-NAX/-

-A UX) 49

(EG95-

-E) 56

(EG95-

NA/-EX X/

-NAX/-

-A UX) LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n USB_BOO OT 75 DI RESERVE ED Pins Force the to enter e download e module emergency d mode VILmin = -0 VILmax = 0 VIHmin = 1 VIHmax =

0.3V 0.6V 1.2V 2.0V wer domain. mmended to he test 1.8 V pow It is recom reserve th points. Pin Name Pin No. I/O Descript tion DC Chara acteristics Comment t NC NC 1,2, 11 14, 16, 51,

, 57, 63 66,

, 7678, 88, 92 99 RESERVE ED 18, 25,

, 56 Reserved d Keep thes unconnec se pins cted. Keep thes unconnec Pin 56 is o reserved o se pins cted. only on EG95-E. ng table brie efly outlines t the operatin ng modes to be mention ed in the fol llowing chap pters. K Keep all RES SERVED pin ns and unuse ed pins unco onnected. NOTE The followin 3.4. Ope erating M Modes Table 5: Ov verview of O Operating M Modes Mode Detai ls Normal Operation Idle Talk/D Data Minimum Functional Mode ity AT+C remov invalid CFUN=0com ving the pow d. S Software is r ready to sen active. The nd and receiv module has ve data. sregistered onthe netwo ork, and it is s N Network con d decided by n nnection is o network sett ongoing. In th ingand data his mode, th a transfer rat he power con te. nsumption is s mand can s wer supply. set the mod In this cas dule to a m se, both RF minimum fun F function a nctionality m nd (U)SIM mode withou t card will be e Airplane Mode AT+C mode CFUN=4 com

. In this case mmand or W e, RF functio W_DISABLE on will be in E# pin can valid. set the mo odule to en nter airplane e Sleep Mod de In this s mode, the e current co onsumption of the mod ule will be reduced to the minima al es_Hardwa are_Design 3 34 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n level. and T During this TCP/UDP da mode, the ata from the module can network nor n still receive rmally. e paging me essage, SM S, voice cal ll wn Power Dow Mode In this inactiv VBAT s mode, the ve. The se T_RF and VB power man erial interfac BAT_BB) re nagement un ce is not a mains applie nit shuts dow accessible. ed. wn the pow Operating er supply. S voltage (co Softwar goes s onnected to o 3.5. Pow wer Savin ng 3.5.1. Sle eep Mode 3.5.1.1. UA ART Applica ation communicate mode. EG95 is abl sub-chapter If the host c enter sleep Execut Drive D The followin le to reduce rsdescribe th its current c he power sa consumption aving proced n to a minim dures of EG9 95 module. mum value du uring the sle eep mode. T The following g es with mod dule via UAR RT interface

, the followin ng precondit tions can let t the module e e AT+QSCL DTR to high LK=1comma level or kee andto enable p it open. e sleep mod de. ng figure sho ows the con nection betw ween the mo odule and th he host. Mod ule H Host RXD TXD RI DTR AP _READY GND TXD RXD EINT GPIO GPIO GND Figur re 3: Sleep Mode Appl ication via UART host DTR to o low level w will wake up the module. Driving the When E details AP_RE EG95_Serie EG95 has a about RI be EADY will de a URC to re ehaviors. etect the slee Please refer to AT+

+QCFG="ap pready"for d details. port, RI sign nal will wake e up the ho ost. Please r refer to Cha apter 3.17fo r ep state of h host (can be e configured to high leve el or low leve el detection)

). es_Hardwa are_Design 3 35 / 103 LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 3.5.1.2. US SB Applicat tion with US SB Remote e Wakeup Fu unction If the host s must be me Execut Ensure The ho The followin upports USB et to let the m B suspend/r module ente resume and er sleep mod remote wak de. keup function ns, the follow wing three p preconditions s e AT+QSCL e the DTR is sts USB bu LK=1comma held at high us, which is c andto enable h level or ke connected w e sleep mod ep it open. with the mod de. dules USB i nterface, en nters suspen nd state. ng figure sho ows the con nection betw ween the mo odule and th he host. Modu ule USB B_VBUS U USB_DP U SB_DM AP_ _READY GND Host VDD USB_ _DP USB_ _DM GPIO GND Fig gure 4: Slee ep Mode Ap pplication w with USB Re emote Wake eup G95through URC to rep USB will wa ort, the mod ake up the m dule will sen module. nd remote w wakeup signa als via USB busso as to o Sendin When E wake u g data to EG EG95has a up the host. 3.5.1.3. US SB Applicat tion with US SB Suspen d/Resume a and RI Fun ction supports US wake up the B suspend/r host. resume, but does not su upport remot te wake-up function, the e RI signal is s hreeprecond ditions to let the module e enter sleep p mode. e AT+QSCL e the DTR is sts USB bu LK=1comma held at high us, which is c andto enable h level or ke connected w e sleep mod ep it open. with the mod de. dules USB i nterface, en nters suspen nded state. ng figure sho ows the con nection betw ween the mo odule and th he host. es_Hardwa are_Design 3 36 / 103 If the host s needed to w There are th Execut Ensure The ho The followin EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Modu ule USB_ _VBUS US SB_DP US SB_DM AP_R READY RI GND Host VDD USB_ DP USB_ DM GPIO EINT GND Figu ure 5: Sleep p Mode App plication wit th RI g data to EG modulehas a G95via USB a URC to re B will wake u port, RI sign up the modu nal will wake le. e up the hos t. 3.5.1.4. US SB Applicat tion withou t USB Susp pend Funct tion does not ntrol circuit to support US o let the mod SB suspend dule enter s function, U leep mode. USB_VBUS S should be e disconnec cted with an n Sendin When m If the host externalcon Execut Ensure Discon The followin Switching o EG95_Serie e AT+QSCL e the DTR is nect USB_V VBUS. LK=1comma held at high andto enable h level or ke e the sleep m ep it open. mode. ng figure sho ows the con nection betw ween the mo odule and th he host. Power Switch M Module USB_VBUS USB_DP USB_DM RI AP_READY GND Host t GPIO VDD USB_DP USB_DM EINT GPIO GND Fig gure 6: Slee ep Mode Ap pplication w without Susp pend Funct tion nthe power switch tosu pply power t to USB_VBU US will wake e up the mo odule. es_Hardwa are_Design 3 37 / 103 NOTE When the m toit will be in Software:

AT+CFUN c AT+CFU AT+CFU AT+CFU NOTES EG95 provi voltage dom Two VB Two VB The followin LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Please pay refer to doc attention to cument [1] f o the level m for more det match show tails about E wn in dotted EG95 power line betwee manageme en the modu ent applicatio ule and the on. host.Please e 3.5.2. Air plane Mod de module ente naccessible. ers airplane

. This mode mode, the R can be set RF function viathe follow will be disa wing ways. bled, and a ll AT comma ands related d command pr rovides the c choice of the e functional ity level thro ough setting

<fun>as0, 1 or 4. UN=0: Minim UN=1: Full f UN=4: Airpla mum functio functionality ane mode. R nality mode mode (by d RF function

.Both (U)SIM default). is disabled. M and RF fu unctions are disabled. 1. Airplan e mode con ntrol via W_ _DISABLE#

is disabled d in firmware e by defaul t. It can be enabled by y AT+QC 2. The exe CFG="airpla ecution of A anecontrol"

AT+CFUN co

" command. ommand will l not affect G GNSS functi on. or connectio n with theex xternal pow wer supply. T There are tw wo separate e 3.6. Pow wer Supp ply 3.6.1. Pow wer Suppl ly Pins des four VB mains for VB BAT pins fo BAT. BAT_RF pins BAT_BB pins s for module s for module esRF part. es baseban d part. ng table sho ws the deta ils of VBAT pins and gro ound pins. Table 6: Pin n Definition n of VBAT a and GND Pi ns Pin Name Pin No o. Description n Mi n. Typ p. Max

. Unit VBAT_RF 52,53 3.3 3 3.8 4.3 V Power supp RF part. ply for modu les es_Hardwa are_Design 3 38 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n VBAT_BB 32,33 3.3 3 3.8 4.3 V Power supp baseband p ply for modu part. les GND Ground

0

V 3, 31, 4 54, 55, 61,62, 7982, 10010 48,50,

,58, 59, 6774,

,8991, 06 3.6.2. Dec crease Vo ltage Drop p The power never drop network.The supply rang below 3.3V e voltage dro ge of the mo V. The follow op will be le odule is from wing figure ess in 3G an m 3.3Vto4.3 shows the d 4G netwo 3V. Please m voltage dro rks. make sure th op during bu hatthe input urst transmi t voltage wil ll ission in 2G G Burst Transmissio on Burst Transmissio on VBA AT Min.3. 3V Drop Ripple Fi igure 7: Pow wer Supply y Limits dur ring Burst T Transmissio on To decrease and amulti-l is recomme place these application The width o less than 2m In addition, suggested t and high re the power s e voltage dro layer ceram ended to use e capacitors has to be a of VBAT_BB mm.In princi op, a bypass ic chip (MLC ethree ceram s close to V single volta trace shoul iple, the long s capacitor o CC) capacito mic capacito VBAT_BB/V age source a ld be no less gerthe VBAT of about 100 or array sho ors (100nF, 3 BAT_RF pin and can be s than 1mm T trace is, th 0F with low uld also be 33pF, 10pF)f ns. The ma expanded t m, andthe wid he wider it w w ESR(ESR reserved du for composi ain power s o two sub p dth of VBAT ill be.

= 0.7) sho ue to its ultra ng the MLC supply from paths with st T_RF trace s d, ould be used t a-low ESR. I C array, and d al an externa tar structure e. should be no o in order to a that a TVS d verse peak supply. avoid the da diode with su pulse curre mage cause uggested low nt IPP should ed by electric w reverse s d be used. T c surge and tand-off volt The followin electrostati tage VRWM, l ng figure sho cs discharge ow clamping ows the star e (ESD), it is s g voltage VC C r structure o of es_Hardwa are_Design 3 39 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n

VBAT T_RF VBAT T_BB Module

D1 C1 WS4. 5D3HV C2 C3 C4 C5 C6 C7 C8 100 F 100 nF 3 33 pF 10 pF 100 F 100 n nF 33 pF 1 0 pF Figu ure 8: Star S Structure o of Power Su upply 3.6.3. Ref ference De esign for P Power Su pply gn for the m rce. The pow p between t er for the mo AT), a buck c module is ver wer supply the input and odule. If the converter is ry important should be a d output is n re is a big v preferred to t, asthe perf able to prov not too high oltage differ o be used as formance of vide sufficie

, it is sugge rence betwe s the power supply. the module ent current u sted that an een the input e largely dep up to 2A at n LDO shou t source and pends on the e least. If the e ld be usedto o d the desired d ng figure sho bout 3.8V an ows a refere nd the maxim ence design mum load cu for +5V inp urrent is 3.0A ut power so A. ource. The ty ypicaloutput ofthe powe r MIC C29302WU 2 IN N E 1 4 OU UT J J D D A A D N G 3 5 VBAT 100K 1%

47K 1%

470R 470 F 100 nF 51K 4.7 7K 470 F F 100 nF VBAT_EN 47K Figure e 9: Referen nce Circuit of Power S Supply VBAT T Power desig power sour voltage drop supply powe output (VBA The followin supply is ab DC_IN es_Hardwa are_Design 4 40 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n avoid dama mally. Only af aging interna fter the mod al flash, ple dule is shutd ease do not down by PW switch off t WRKEY or AT he power s AT command upply when d, then the p the module e power supply y n be used to o monitor the e VBAT_BB voltage valu ue. For more e details, ple ease refer to o NOTE In order to works norm can be cut o off. 3.6.4. Mo nitor the P Power Sup pply AT+CBC co document [

ommand can

[2]. 3.7. Pow wer-on/of ffScenar ios 3.7.1. Tur rn on Mod ule Using g the PWR KEY The followin ng table sho ws the pin d definitionof P PWRKEY. Table 7: Pin n Definition n of PWRKE EY Pin Name Pin No. Descripti ion DC Ch haracteristic cs Com mment PWRKEY 15 Turn on/o off the modu le VIH = 0 0.8 V The o beca the Q output voltag use of the d Qualcomm c ge is 0.8 V diode drop in n chipset. When EG95 low level fo PWRKEY.A circuit is illu 5 is in powe or at least 5 After STATUS strated in th erdownmode 500ms. It is S pin outpu he following e, it can be t s recommen tting a high figure. turned on to nded to use level, PWR o normal mo e an open d RKEY pin ca de by drivin drain/collect an be releas g the PWRK tor driver to sed. A simp KEY pin to a a o control the e ple reference e 500 ms Turn-on pulse e 4

.7K PWRKEY 10 nF 47 7K Figure 10: T Turn on the e Module by y Using Dri ving Circui t es_Hardwa are_Design 4 41 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n The other w strike may g button for E way to contr generate fro ESD protectio rol the PWR m the finger on. A referen RKEY is usi r. Therefore, nce circuit is ing a button aTVS comp s shownin th n directly. W ponent is ind he following When pressin dispensable figure. ng the key, to be placed electrostatic c d nearby the e S1 TVS PWRKEY Y Close to S1 Figure 11 1: Turn on t the Module by Using K Keystroke The power-o on scenario is illustrated d in the follo owing figure. NO OTE 1 BOOT_CO USB_BOO ONFIG &

OT Pins VBAT PWRKEY VDD_EXT T RESET_N STATUS

(DO) UART USB 500 ms V VH

= 0.8 V VIL 0.5 V About 100 ms 100 ms. pins can After this time n be set to high e, the BOOT_C h level by exte CONFIG ernal circuit. 10 s 12 2 s 13 s I n nactive I n nactive Active Active Fig ure 12: Tim ming of Turn ning on Mod dule EG95_Serie es_Hardwa are_Design 4 42 / 103 NOTES The followin Use the UseAT+

Driving the power-offpro figure. LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 1. Please time bet 2. PWRKE be powe make sure t tween powe EY can be p ered on auto that VBAT is ering up VBA ulled down d omatically a s stable befo AT and pullin directly to G nd shutdow ore pulling d ng down PW GND with a r n is not nee down PWRK WRKEY pin i recommende ded. KEY pin. It is s no less tha ed 10k res s recommen an 30ms. sistor if mod nded that the e ule needs to o 3.7.2. Tur rn off Mod dule ng procedure es can be us sed to turn o off the modu ule normally

e PWRKEY pin.

+QPOWD c command. 3.7.2.1. Tu urn off Mod ule Using t he PWRKEY Y Pin e PWRKEY ocedure afte Y pin to a er the PWR low level RKEY is rele voltage for eased. The r at least power-offsc 650ms, the cenario is ill e module w lustrated int will execute e the following g 650 ms 30 s VBA AT PWRK KEY STATU US Module e Status RUNN NING Powe er -down proced dure OFF Fig ure 13: Tim ming of Turn ning off Mod dule 3.7.2.2. Tu urn off Mod ule Using A AT Comman nd It is also a s module via safe way to PWRKEY p use AT+QP pin. Please refe r todocume ent [2] for de etails about the AT+QPO OWDcomma and. OWDcomm andto turn o off the modu ule, which is similar to tu urning off the e es_Hardwa are_Design 4 43 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n NOTES 1. In orde works n supply 2. When executi r to avoid da normally. On can be cut o turning off ion of the co amaging inte nly after the off. module wit ommand. Ot ernal flash, p e module is please do no shut down ot switch off by PWRKE f the power s Y or AT com supply when mmand, the n the module e r en the powe h the AT c therwise the command, p module will please keep l be turned o p PWRKEY on again afte at high lev er successfu vel after the e ully turn-off. 3.8. Res et the M odule The RESET low level vo T_N pin can oltage for 150 be used to 0460ms. Table 8: Pin n Definition n of RESET_ _N reset the m module.The module can n be reset by y driving RE ESET_N to a a Pin Name Pin No o. Descr ription DC C Characteris tics Co omment RESET_N 17 Reset the module e VIHm VIHm VILma ax = 2.1V in = 1.3V ax = 0.5V The recomm can be used mended circ d to control t uit is similar the RESET_ r to the PWR _N. RKEY contro ol circuit. An open drain/c collector driv ver or button n RESET_ _N 150 460 ms Res et pulse 4.7 K 47K Figure e 14: Refere ence Circui it of RESET T_N by Usin ng Driving C Circuit es_Hardwa are_Design 4 44 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n S2 TVS R RESET_N Close to S2 Fi igure 15: Re eference Ci ircuit of RE ESET_N by Using Butto on The reset sc cenario is ill ustrated inth he following figure. 460 ms 150 ms V VIL 0 .5 V VBA AT RES SET _N Mod Stat dule us V IH 1.3 V Running Res setting Restart Fig gure 16: Tim ming of Res setting Mod dule NOTES EG95provid

(U)SIM 2ca The(U)SIM are support EG95_Serie 1. Use RE 2. Ensure ESET_N onl e that there is y when faile s no large c ed toturn off apacitance the module on PWRKEY by AT+QPO Y and RESE OWDcomma ET_N pins. and and PW WRKEY pin. 3.9. (U)S SIM Interf faces des two (U) SIMinterface es, andonly y one (U)SI Mcard can work at a t time.The (U U)SIM 1 and d rdscan be s witched by A AT+QDSIM command.F For more det tails, please refer to doc cument [2]. interfacesci ed. ircuitrymeet ETSI and I MT-2000 re equirements

. Both 1.8 V V and 3.0 V(

(U)SIMcards s es_Hardwa are_Design 4 45 / 103 LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Table 9: Pin n Definition n of (U)SIM Interfaces Pin Name Pin N No. I/O Desc ription Com mment Eith sup auto her 1.8 V or pported by th omatically. 3.0 V is he module Eith sup auto her 1.8 V or pported by th omatically. 3.0 V is he module USIM1_VD DD 43 PO Powe er supply for

(U)SIM1 ca ard USIM1_DA ATA 45 Data signal of (U

)SIM1 card USIM1_CL LK 46 Clock k signal of (U U)SIM1card USIM1_RS ST 44 Reset t signal of (U U)SIM1 card d USIM1_ PRESENC CE 42

(U)SI M1 card ins ertion detec ction USIM_GN D 47 Speci ified ground for (U)SIMc card USIM2_VD DD 87 PO Powe er supply for

(U)SIM2 ca ard USIM2_DA ATA 86 Data signal of (U

)SIM2 card USIM2_CL LK 84 Clock k signal of (U U)SIM2 card d USIM2_RS ST 85 Reset t signal of (U U)SIM2 card d 83 DI

(U)SI M2 card ins ertion detec ction IO DO DO DI IO DO DO USIM2_ PRESENC CE EG95suppo pin. The fu configured command. The followin orts (U)SIM nction supp card hot-plu ports low lev ug via USIM vel and hig M_PRESENC h level dete CE (USIM1_ ections. By _PRESENC default, it is CE/USIM2_P s disabled, PRESENCE

) and can be e viaAT+QSIM MDET com mmand. Plea ase refer to o documen nt [2] for m more details s about the e ng figure sho ows a refere ence design for (U)SIM interface wit th an 8-pin (

(U)SIM card connector. es_Hardwa are_Design 4 46 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n VDD D_EXT USIM M_VDD 51K 15K Mod dule USIM_ _GND USIM_ _VDD USIM_ _RST USIM_ USIM_ _CLK _PRESENCE E USIM_ _DATA 0R 0R 0R 100 nF

(U)SIM Card Connect tor VCC RST CLK GND D VP P IO O 33 pF F 33 pF 33 p F GND GND D GND Fig ure 17: Ref ference Circ cuitof (U)SI MInterface with an 8-p pin (U)SIMC Card Conne ctor If (U)SIM c reference c figure. card detect circuit of (U) ion function

)SIM interfa n is not ne ace with a 6 eeded, plea 6-pin (U)SIM se keep U M card conn SIM_PRES nector is illu ENCE unco ustrated in t onnected. A A the following g USIM_V VDD USIM_GND USIM_VDD USIM_RST USIM_CLK USIM_DATA 15K 0R 0R 0R Module 33 pF 3 33 pF 33 pF 100 nF

(U)SIM Card d Connector VCC RST CLK GND VPP IO Fig ure 18: Ref ference Circ cuitof (U)SI M Interface e with a 6-p in (U)SIM C Card Conne ctor GND GND enhance the riteria below e reliability w in the (U)S and availab SIMcircuit de bility of the (

esign:

U)SIM card sin custome ers applicat tions, please e placementof than 200mm U)SIMcard s

(U)SIMcard m as possib signals away d connector ble. y from RF a nd VBAT tra aces. to the modu ule as close e as possible e. Keep the trace length h es_Hardwa are_Design 4 47 / 103 In order to follow the cr Keep p as less Keep (U EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n and USIM_ USIM_VDD ossible.If th he ground y. ound directly A and USIM M_CLK, kee _GND less th is complete han 1F, an e on custo d place it as s B, omers PCB ep them aw way fromeac ch other and d s recommen F.The 0 re e debugging hat the (U) nded to add esistors shou g. The 33p

)SIMperiphe d a TVSdiod uld be adde pFcapacitors eral circuit s de array who ed in series s are used should be c ose parasitic c between the e for filtering g close to the e _DATA line c plied, and sh can improve hould be plac anti-jammin ced close to ng capability o the (U)SIM y when long Mcard connec layout trace e ctor. Make s close t USIM_ To avo shield t In orde capacit module interfer

(U)SIM The pu and sen sure the byp to (U)SIM GND can be oid cross-tal them with su er to offer go tance should e and the (

rence of EG card connec ll-up resisto nsitive occa ass capacito card conne e connected k between urrounded g ood ESD pro d not be mo

(U)SIMcard GSM900.Ple ctor. or on USIM_ sion areapp or between ector as po d to PCB gro USIM_DATA round. otection, it i ore than15pF to facilitate ease note t 3.10. US SB Interf face ains one int n and suppo rves as a sla ences outpu pin definition tegrated Un orts high-sp ave device a ut,software d n of USB inte niversal Ser eed (480 M and is used debugging, f erface. ial Bus (US Mbps) and fu for AT comm firmware up SB) interface ull-speed (12 mand comm pgrade and v ewhich com 2 Mbps) mo unication, da voice over U mplies with t odes. The US ata transmis USB. The fo the USB 2.0 0 SB interface e ssion, GNSS S llowing table e Table 10: P Pin Definitio on of USB In nterface Pin Name Pin No. I/O Des scription Comment 9 10 8 3 IO IO PI USB B differential l data bus (+

+) USB B differential l data bus (-

) Require dif impedance fferential e of 90 . Require dif impedance fferential e of 90 . USB_VBU US USB B connection ndetection Typical:5.0 0 V Gro und etails about USB 2.0 sp ecifications,

, please visit t http://www w.usb.org/hom me. nterface is gure shows a recommend areference c ded to be re circuit of US eserved for SB interface. firmware u upgrade in c customers design. The e EG95 conta specification can only se NMEA sent shows the p USB_DP USB_DM GND For more de The USB in following fig EG95_Serie es_Hardwa are_Design 4 48 / 103 LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Minimize th hese stubs Test Points NM_0R NM_0R ESD Array Module VDD USB_VBUS S USB_DM M USB_DP P GND D R3 R4 L1 Close to M odule MCU USB B_DM USB B_DP GND D Figure e 19: Refere ence Circuit t of USB Int terface oke L1 is er to suppres es between recommend ss EMI spur n the module ded to be rious transm e and the te added in ission. Mea est points so series betw nwhile, the 0 o as to facilit ween the m 0 resistors tate debugg module and d s (R3 and R4 4) ging, and the e t. In order to to the mod must be as o ensure th ule, and als s short as po e integrity o so these re ossible. of USB data sistors shou a line signal, uld be place

, L1/R3/R4 ed close to components s r. each other s should be c complied wi th when des sign the USB B interface, so as to me eet USB 2.0 es as differe ential pairs w with total gro ounding. The e impedance e ute the USB trace is 90 al traces un the USB di ut also right ce of the ES on to the se B signal trace

. der crystals fferential tra and left side SD protectio election of th s, oscillators aces in inne es. n componen he compone s, magnetic er-layer with devices and ground shie d RF signal elding onno traces. It is s r ot only uppe nt might cau ent. Typicall use influence ly, the stray es on USB d y capacitanc data lines, so o ce should be e tection comp ponents to t he USB con nnector as cl lose as poss sible. 3.11. UA ART Inte erfaces e provides tw hows their fe wo UART in eatures. terfaces: the e main UAR RT interface and thedeb ug UART in nterface. The e es_Hardwa are_Design 4 49 / 103 mode cho A common customersM MCU in orde should bead dded in seri e resistors are d by default not mounte must be pla aced close Theextra stu ubs of trace The followin specification ng principles n. It is imp of USB Do not importa and low Junctio please less tha Keep th portant to ro B differential route signa ant to route wer layers bu on capacitan pay attentio an 2pF. he ESD prot The module following sh EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n nterface sup 921600 bps ardware flow pports 9600b and 300000 w control, a bps, 19200b 00 bpsbaud r and is used bps, 38400b rates, and th d for AT co bps, 57600b he default is ommand co ps, 115200b 115200 bps ommunicatio bps, 230400 0 s. It supports s on and data a nterface sup pports 11520 00 bpsbaud rate. It is us sed forLinux x console an d log output t. ng tables sho ow the pin d definition of t the UART in nterfaces. Table 11: P Pin Definitio on of Main U UART Interf faces Pin Name Pin N No. I/O De escription Commen t ain UART in 60800 bps, 9 nd CTS ha ission. bug UART i The ma bps, 46 RTS a transm The de The followin RI DCD CTS RTS DTR TXD RXD 39 38 36 37 30 35 34 DO O DO O DO O DI DI DO O DI DO O DI Min n.

-0.3 3 1.2 2 Re equest to se nd 1.8 V pow wer domain Rin ng indicator Da ata carrier de etection Cle ear to send Da sle ata terminal eep mode co ready, ontrol Tra ansmit data Re eceive data Table 12: P Pin Definitio on of Debug g UART Inte erface Pin Name Pin N No. I/O De escription Commen t Tra ansmit data 1.8 V pow wer domain Re eceive data 1.8 V pow wer domain DBG_TXD D DBG_RXD D 23 22 The logic le vels are des scribed in th e following t table. Table 13:Lo ogic Levels s of Digital I I/O Max. 0.6 2.0 Unit V V es_Hardwa are_Design 5 50 / 103 Parameter r VIL VIH EG95_Serie 0 1.3 35 12 20K TXD RXD RTS CTS GPIO EINT GPIO GND LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 0.45 1.8 V V e provides 1 ith a 3.3V U ded. The foll

.8 V UART i ART interfac owing figure interfaces. A ce. A level tr e shows aref A level trans ranslator TX ference des lator should XS0108EPW sign. be used if c WR provided customers a by Texas In application is s nstruments is s VOL VOH The module equipped w recommend VDD_ _EXT 0.1 F VCCA A 1 0 K 0.1 F VDD_ _MCU Translator VC CCB G GND B1 B2 B3 B4 B5 B6 B7 B8 OE A1 A2 A3 A4 A5 A6 A7 A8 5 51K 51K K RI D DCD C CTS R RTS D DTR T TXD R RXD RI_MC CU DCD_ _MCU CTS_ _MCU RTS_ _MCU DTR_ _MCU TXD_ _MCU RXD_ _MCU Figure 2 20: Referenc ce Circuit w with Transla ator Chip http://www. ti.com formo ore informat tion. Please visit Another exa lines, please ample with t e refer to tha transistor tra at of circuits anslation cir s in solid line rcuit is show es, but pleas wn as below. se pay atten

. For the des tion to the d sign of circu direction of c uits in dotted d connection. VDD_EXT V VDD_EXT 4.7K 1 nF M MCU/ARM 10K Module 10K 1 nF VCC_MCU 4.7K VD DD_EXT RXD TXD RTS CTS DTR RI DCD GND Figure 21 1: Referenc e Circuit wi ith Transist tor Circuit NOTE EG95_Serie Transistor c circuit solutio on is not suit table for app plications wi ith high baud d rates exce eeding 460k kbps. es_Hardwa are_Design 5 51 / 103 LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 3.12. PC CM and I I2C Inter rfaces EG95 provid following mo Primary Auxiliar In primary m edge. The P kHz, 512 kH PCM_CLK a In auxiliary rising edge. with a 256 k EG95 suppo with 8 kHz P 8 kHz PCM_ des one Pu odes and on lse Code M ne I2C interf odulation (P face:

PCM) digital interface fo or audio des sign, which s supports the e y mode (sho ry mode (lon ort frame syn ng frame syn nchronizatio nchronizatio on, works as on, works as both maste s master only er and slave)

) y) mode, the d PCM_SYNC Hz, 1024 kH at 16 kHz P pled on the f ata is samp ge represent C falling edg Hz or 2048 kHz PCM_ CM_SYNC. falling edge ts the MSB. _CLK at 8 k of the PCM In this mod kHz PCM_SY M_CLK and t de, the PCM YNC, and a transmitted o M interface s also support on the rising g supports 256 6 ts 4096 kHz z mode, the d

. The PCM_ kHz, 512 kH data is also _SYNC rising z, 1024 kHz sampled on g edge repre z or 2048 kH n the falling esents the M Hz PCM_CL edge of the MSB. In this K and an 8 e PCM_CLK s mode, the kHz, 50% d K and transm PCM interfa uty cycle PC mitted on the e ace operates s CM_SYNC. orts 16-bit lin PCM_SYNC _SYNC and near data fo C and 2048 d 256 kHz PC ormat. The fo kHz PCM_C CM_CLK. ollowing figu CLK, as well ures show th l asthe auxil eprimary mo liary modes odes timing s timing relat g relationship p tionship with h 125 s P CM_CLK 1 2 2 5 5 2 5 6 P C CM_S Y NC P C CM_DOUT P CM_DIN MS B LS B B MS B MS B LS B MS B Figure 22:

Primary Mo ode Timing g es_Hardwa are_Design 5 52 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 125 s P CM_ _CLK 1 2 31 3 32 P CM_ _S Y NC P CM_ _DOUT P CM_ _DIN MS B MS B L LS B L LS B Figure 23: A Auxiliary M Mode Timing g ows the pin definition o of PCM and I2C interfac ces which c can be appli ed on audio o The followin codec desig ng table sho gn. Table 14: P Pin Definitio on of PCM a and I2C Inte erfaces Pin Name Pin N No. I/O Descri ption C Comment PCM_DIN DI PCM d ata input 1

.8 V power domain PCM_DOU UT DO PCM d ata output 1

.8 V power domain PCM_SYN NC PCM_CLK K IO IO PCM d synchro ata frame onization sig gnal 1

.8 V power domain PCM d ata bit clock k 1

.8 V power domain I2C_SCL OD I2C ser rial clock I2C_SDA OD I2C ser rial data A An external p re equired. A An external p re equired. pull-up to 1.8 8 V is pull-up to 1.8 8 V is 6 7 5 4 40 41 mode can be e synchroni e configured zationforma d by AT com at with 2048 mmand, and 8 kHzPCM_ the default _CLK and configuratio 8 kHzPCM_ on is master _SYNC.Plea mode using g ase refer to o

[2] aboutAT T+QDAIcom mand for de etails. ng figure sho ows areferen nce design o of PCM and I2C interfac ces with exte ernal codec IC. es_Hardwa are_Design 5 53 / 103 Clock and m short frame document [

The followin EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n BCLK K LRCK K DAC ADC SCL SDA MICBIAS INP INN LOUTP LOUTN S A B I Module K K 7 7

. 4 4 K 7

. 4 1.8 V Codec c Figure 24:

Reference e Circuit of P PCM and I2 2C Applicat ion with Au udio Codec to reserve a an RC (R = 2 22, C = 22 2pF) circuit on the PCM M lines, espe ecially for aster device e pertaining t to I2C interf face. PCM_C CLK PCM_SY YNC PCM_DO OUT PCM_D DIN I2C_S SCL I2C_S SDA NOTES 1. 2. It is reco PCM_CL

. EG95 wo ommended t LK. orks as a ma 3.13. SP PI Interfa ace SPI interfac link with the voltage is 1 The followin ce of EG95ac e peripheral

.8 V with clo cts asthe ma devices. It ock rates up aster only. It isdedicated to 50MHz. t provides a to one-to-o duplex, syn one connect chronous an ion, withoutc nd serial com chip select. mmunication n Its operation n ng table sho ws the pin d definition of S SPI interfac e. Table 15: P Pin Definitio on of SPI In terface Pin Name Pin N No. I/O Descri ption Comm ment SPI_CLK 26 DO Clock s signal of SP I interface 1.8 V p power doma ain SPI_MOSI I 27 DO Master interfac r output slav ce e input of SP PI 1.8 V p power doma ain es_Hardwa are_Design 5 54 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n SPI_MISO O 28 DI Master interfac r input slave ce e output of S SPI 1.8 V p power doma ain The followin ng figure sho ows areferen nce design o of SPI interf face with per ripherals. SP PI_CLK SPI_ _MOSI SPI_ _MISO Module e SPI_CLK SPI_MOSI SPI_MISO Periphe erals Fig ure 25: Ref ference Circ cuit of SPI I Interface w ith Periphe erals NOTE T ho he module p ost if custom provides 1.8 mers applica 8 VSPI interf ationis equip face. A level pped with a l translator s 3.3V proces should be us ssoror devic sed between e interface. n the module e and the 3.14. Ne etwork S Status Ind dication e provides o ED. The module indication L The followin status. one network k indication p pin: NETLIG GHT. The pi n is used to o drive a ne etwork status s ng tables de escribe the p pin definition n and logic le evel change es of NETLIG GHT in diffe rent network k Table 16: P Pin Definitio on of Netwo ork StatusIn ndicator Pin Name Pin No o. I/O D Description Comment NETLIGHT T 21 DO In ndicate the m modulesnetw work activity y status 1.8 V powe er domain Table 17: W Working Sta ate of Netwo ork Status I Indicator Pin Name Lo ogic Level C Changes Network Status Fli icker slowly

(200ms Hig gh/1800ms L Low) Network s searching Fli icker slowly

(1800ms H igh/200ms L Low) Idle es_Hardwa are_Design 5 55 / 103 NETLIGHT T EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Fli icker quickly y (125ms Hig gh/125ms L Low) Data trans sfer is ongoi ing Alw ways High Voice call ing A reference e circuit is sh hown in the f following fig ure. Module NETLIGHT T 4.7K VBAT 2.2K 47K F Figure 26: R Reference C Circuit of Ne etwork Stat tus Indicato or 3.15. ST TATUS The STATU module is p US pin is se owered on.T et as the m The followin odules ope g table desc eration statu cribes the pi us indicator. in definition put high lev It will outp of STATUS. el when the e Table 18: P Pin Definitio on of STATU US Pin Name Pin No. I/O Description n Com ment STATUS 20 DO Indicate the e modulesop perationstatu us 1.8 V If unu V power dom used, keep i main. t open. The followin ng figure sho owsthe refer rence circuit t of STATUS S. Module STATUS S 4.7K VBAT 2.2K 47K Fig ure 27: Ref ference Circ cuit of STAT TUS es_Hardwa are_Design 5 56 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 3.16. AD DC Interfa ace e provides read the vo

[2]. The module beused to r document [

In order to ground. one analog ltage value g-to-digital on ADC0 p converter (A pin. For mor ADC) interf re details ab face. AT+Q bout the co QADC=0 co mmand, ple mmand can n ease refer to o improve the e accuracy of ADC volt tage values s, the traces s of ADC sh hould be su rrounded by y Table 19: P Pin Definitio on of ADC I nterface Pin Name Pin No o. I/O Descri ption Com mment ADC0 24 AI Force t emerge the module t ency downlo to enter oad mode If un ope nused, keep en. p this pin ng table des cribes the c characteristic cs of ADC in nterface. Table 20: C Characterist tics of ADC C Interface Parameter r Min. Typ p. Max. ADC0 Volt tage Range 0.3 ADC Reso olution VBAT_BB B 15 Unit V bits 1. 2. It is proh It is reco hibited to sup mmended to pply any volt o use resisto tage to ADC or divider cir C pins when rcuit for ADC ADC pins a C application re not powe n. ered by VBA AT. 3.17. Be ehaviors s of RI

="risignalty

[2] for detai ype","physic ls. cal" comma and can be used to con nfigure RI be ehaviors.Ple ease refer to o on which por rt URC is pre esented, UR RC will trigge er the behav vior of RI pin n. The followin NOTES AT+QCFG=

document [

No matter o EG95_Serie es_Hardwa are_Design 5 57 / 103 LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n NOTE The default command.P State Idle URC EG95provid powered up the module U RC can be outputted fr rom UART p port, USB A AT port and USB modem m port throu ugh configur ration via A AT+QURCCF FG comman nd. The defa ault port is U SB AT port. behaviors o Please refer of the RI are to documen e shown as b nt [2] for de below, and c etails. can be chan ged by AT+

QCFG="urc c/ri/ring"

Table 21: D Default Beha aviors of R RI R Response R RI keeps at high level R RI outputs 1 20ms low p ulse when a a new URC r returns 3.18. US SB_BOOT T Interfa ce des a USB_ p, andthe mo supports fir _BOOT pin. odule will en mware upgr Customers nter emerge rade over US s can pull u ency downlo SB interface up USB_BO oad mode w e. OOT to 1.8 when it is pow V before V wered on. In VDD_EXT is s n this mode e, Table 22: P Pin Definitio on of USB_B BOOT Inter rface Pin Name Pin No o. I/O Descri ption Com mment USB_BOO OT 75 DI Force t emerge the module t ency downlo to enter oad mode main. 1.8 Acti It is rese Vpower dom ive high. recommend erve test po ded to ints. The followin emergency ng figures sh download m howthe refe mode. rence circui t of USB_BO OOT interfa ce and timin ng sequence e of entering g es_Hardwa are_Design 5 58 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Mod dule USB B_BOOT Test points 4.7K Close to test t points TV VS VDD_EXT Figure 28:

: Reference e Circuit of USB_BOOT T Interface NOTE E 1 VBAT 500 m ms VH =

= 0.8 V VIL 0.5 About 10 5 V 00 ms USB_ VDD_ enter powe _BOOT can b _EXT Is powe r emerge ncy ered on. be pulled up to ered up, and th download mo o 1.8 V before e he module will l ode wh en i t is s PWRK KEY VDD_E EXT USB_B BOOT RESET T_N Figure 2 29: Timing Sequence f for Entering g Emergenc cy Downloa ad Mode NOTES 1. 2. Please m the time

. When us above tim VBAT. C download d mode. make sure th between po sing MCU to ming sequen Connect the hat VBAT is owering up V o control m nce. It is not test points s stable befo VBAT and pu odule to en t recommen as shown ore pulling d ulling down nter the eme ded to pull u in Figure 2 down PWRK PWRKEY p ergency dow up USB_BO 28 can man KEY pin. It is in is no less wnload mod OOT to 1.8 V ually force s recommen nded that

. s than 30ms. follow the de, please f wering up V before pow the module e to enter es_Hardwa are_Design 5 59 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n GNSS S Rec eiver r 4.1. Gen neral Des scription 4 G EG95 includ Qualcomm EG95 suppo USB interfa By default, details abou The followin Sensitivity

(GNSS) TTFF

(GNSS) EG95_Serie des a fully i

(GPS, GLO ntegrated g NASS, BeiD lobal naviga Dou, Galileo ation satellit and QZSS) te system so

). olution that supports Ge en8C-Lite o of orts standar ce by defau rd NMEA-01 lt. 83 protocol

, and output ts NMEA sen ntences at 1 1Hz data up date rate via a EG95 GNS ut GNSS eng SS engine is gine techno s switched o logy and co off. It has to nfigurations o be switch s, please refe ed on via A er to docum AT comman ment [3]. d. For more e 4.2. GNS SS Perfo rmance ng table sho ws GNSS p performance of EG95. Table 23: G GNSS Perfo ormance Parameter r D escription Condition ns C old start Autonomo ous Reacquisition R n Autonomo ous Tr racking Autonomo ous old start C

@open sky W Warm start

@open sky Autonomo ous XTRA ena abled Autonomo ous XTRA ena abled H ot start Autonomo ous Typ p.

-14 46

-15 57

-15 57 34. 6 11. 57 26. 09 3.7 1.8 Unit dBm dBm dBm s s s s s es_Hardwa are_Design 6 60 / 103 LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n

@open sky C EP-50 XTRA ena abled Autonomo

@open sk ous ky 3.4

<2. 5 s m 1. 2. Tracking positionin

. Reacquis within 3 m 3. Cold sta successf sensitivity:

ng for at lea sition sensit minutes afte art sensitivit fully within 3 m GNSS sig the minimum s continuous ast 3 minutes nimum GNS ivity: the min ck. er loss of loc mum GNSS y: the minim 3 minutes aft ter executin gnal power a sly). SS signal po S signal po g cold start wer at whic command. at which the module can n maintain lo ock (keep wer required d for the mo odule to main ntain lock ch the mod dule can fix x position 4.3. Layo out Guid delines ng layout gu idelines sho ould be take n into accou unt in custom mers design n. ize the dista circuits such way from the round vias a n and protec 50 characte ance among h as (U)SIM e antennas. around the ction. eristic imped GNSS ante card, USB enna, main a interface, ca antenna and amera modu d Rx-diversity ule and disp y antenna. lay connect or should be e GNSS trace e and sens sitive analog g signal trac ces to provi de coplana r dance for the e ANT_GNS SS trace. r to Chapter r 5 for GNSS S antenna r reference de esign and an ntenna insta llation inform mation. Accuracy

(GNSS) NOTES The followin Maximi Digital kept aw Use gr isolatio Keep 5 Please refe EG95_Serie es_Hardwa are_Design 6 61 / 103 LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Anten nna In nterfa aces 5 A EG95 anten used toresi antenna int antenna por nna interface st the fall o erface whic rts is 50 . es include a of signals ca ch is only su a main ante aused by h upported on nna interfac igh speed m n EG95-NA/

ce andanRx-

movement a

/-EX/-NAX/-N

-diversity an and multipa NAXD/-AUX ntennainterfa ath effect, a X.The imped ace which is s and a GNSS S dance of the e 5.1. Main n/Rx-div ersityAn ntenna In nterfaces s 5.1.1. Pin n Definition n The pin defi Table 24: P Pin Definitio on of RF An ntennas initionof mai in antenna a and Rx-dive rsityantenna a interfaces is shown be elow. Pin Name Pin No. I/O Descriptio on Comment ANT_MAIN N 60 Main anten nna pad 50 imped dance ANT_DIV(

EG95-E) 49 Receive di versityanten nna pad 50 imped dance IO AI 56 AI Receive di versity ante nna pad 50 imped dance EG95-NA/-

-NAXD/-AU ANT_DIV(

EX/-NAX/-

X) 5.1.2. Ope erating Fr requency Table 25: M Module Ope erating Freq quencies Tra nsmit 824 4~849 880 0~915 171 0~1785 185 50~1910 Receive e 869~894 4 925~960 0 1805~18 880 1930~19 990 U Unit M MHz M MHz M MHz M MHz es_Hardwa are_Design 6 62 / 103 3GPP Ban nd GSM850 EGSM900 DCS1800 PCS1900 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n LTE-FDD B B7 250 002570 262026 690 WCDMA B B1 192 201980 WCDMA B B2 185 501910 WCDMA B B4 171 01755 WCDMA B B5 WCDMA B B8 824 4849 880 0915 LTE-FDD B B1 192 201980 LTE-FDD B B2 185 501910 LTE-FDD B B3 171 01785 LTE-FDD B B4 171 01755 LTE-FDD B B5 824 4849 LTE-FDD B B8 LTE-FDD B B12 LTE-FDD B B13 LTE-FDD B B20 LTE-FDD B B26 LTE-FDD B B28 880 0915 699 9716 777 7787 832 2862 814 4849 703 3748 211021 170 193019 990 211021 155 869894 4 925960 0 211021 170 193019 990 180518 880 211021 155 869894 4 925960 0 729746 6 746756 6 791821 1 859894 4 758803 3 M MHz M MHz M MHz M MHz M MHz M MHz M MHz M MHz M MHz M MHz M MHz M MHz M MHz M MHz M MHz M MHz M MHz M MHz M MHz LTE-FDD B B25 185 501915 193019 995 LTE-FDD B B66 171 0~1780 2100~22 200 5.1.3. Ref ference De esign of R RF Antenn na Interfac ce Areference should be re design of AN eserved for NT_MAIN a better RF pe nd ANT_DIV erformance. Vantenna pa

. The capaci ads is shown itors are not n as below. A t mounted by A-type mat y default. tching circui it es_Hardwa are_Design 6 63 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n C1 NM C3 NM M Module ANT_MAIN Ma an ain tenna R1 0 0R ANT_DIV R2 0 0R C2 NM C4 NM Div ant versity tenna Figure 30:

: Reference e Circuit of RF Antenna a Interface NOTES 1. Keep a receiving proper dista g sensitivity. 2. 3. ANT_DIV V function i receive d diversity.Plea

. Place th e -type m possible. ance betwe en the mai n antenna a and theRx-d diversityante enna to imp prove the s enabledb ase refer to matching com y default.AT document mponents (

T+QCFG="d

[2] for detai R1&C1&C2 divctl",0com ls.

, R2&C3&C mmand can be used to o disable C4) as close e to the an tenna as 5.1.4. Ref ference De esign of R RF Layout For users impedance the heightfr grounds (S impedance. structures. PCB, the of the RF tra romthe refe

). Microstrip The followi characterist aces is usua rence groun p or coplana ing are refe tic impedan ally determin nd to the s ar waveguid rence desig nce of all R ned by the tr signal layer(

de is typica gns of micro RF traces s race width (W

(H), and the lly used in strip or copl should be c W), the mate e spacing b RF layout t lanar waveg controlled to erials dielec between RF to control c guide with d o 50. The e nt, ctric constan F traces and d characteristic c ifferent PCB B es_Hardwa are_Design 6 64 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Figure 31: Micros trip Design n on a 2-lay yer PCB Fig gure 32: Co oplanar Wa aveguide D Design on a a 2-layer PC CB Figure 3 33: Coplan ar Wavegu uide Design n on a 4-lay yer PCB (L Layer 3 as R Reference G Ground) es_Hardwa are_Design 6 65 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Figure 3 34: Coplan ar Wavegu uide Design n on a 4-lay yer PCB (L Layer 4 as R Reference G Ground) performance e and reliabi ility, the follo owing princi ples should be complie ed with in RF F n impedance e simulation tool to accu urately contr rol the chara acteristic imp pedance of RF traces to o pins should not be desig gned as the rmal relief p pads, and sh hould be fully y pins and the hanged to cu der the sign aces should ground could should be n nterference e RF conne urved ones. al pin of the be complet d help to im no less than sources, a ector should The recomm e antenna co e. Meanwhil mprove RF p two times th nd avoid in be as short mended trac onnector or s le, adding so performance he width of R tersection a t as possible ce angle is 1 solder joint. ome ground e. The distan RF signal tra and paralleli e, and all the e 135. vias around d nce between n aces (2 x W)

). ing between n ensure RF p gn:

In order to e layout desig Use an 50. The GN connec The dis right-an There s The ref RF trac the gro Keep R traces o ND pins adja cted to groun stance betwe ngle traces s should be cl ference grou ces and the und vias and RF traces a on adjacent acent to RF nd. een the RF should be ch earance und und of RF tra reference g d RF traces away from in layers. etails about RF layout, p please refer to docume ent [5]. 5.2. GNS SS Anten nna Inter rface For more de The GNSS pin definitio antenna int n and freque terface is on ency specifi nly supporte cation of GN ed on EG95-

NSS antenn

-NA/-EX/-NA a interface. AX/-AUX.Th he following tables show w Table 26: P Pin Definitio on of GNSS S Antenna In nterface Pin Name Pin No. I/O De escription Com mment 49 AI GN NSS antenn a 50 impedance e SS(EG95-N AX/NAXD/-A ANT_GNS A/-EX/-NA UX) Table 27: G GNSS Frequ uency Type GPS F requency 15 575.421.02 23 GLONASS S 15 597.51605 5.8 Galileo 15 575.422.04 46 Unit MHz MHz MHz es_Hardwa are_Design 6 66 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n BeiDou (C ompass) 15 561.0982.0 046 15 575.42 MHz MHz QZSS A reference design of G GNSS anten na is shown n as below. V VDD 0.1 F 10R R GNSS Antenna Module e ANT_G GNSS 47 nH 100 pF 0R NM NM Figure 35: Refere nce Circuit of GNSS A Antenna ng table sho ws the requ irements on n main anten nna, Rx-dive ersity antenn na and GNS SS antenna. An exter 1. 2. If the mo nal LDO can odule is desi n be selecte gned with a ed to supply passive ant power acco tenna, then ording to the the VDD cir active ante rcuit is not n nna requirem eeded. ment. NOTES GNSS1) EG95_Serie 5.3. Ante enna Ins stallation n 5.3.1. Ant tenna Req quirement The followin Table 28: A Antenna Req quirements s Type Requirem ments Frequency Polarizatio VSWR: <

Passive an Active ant y range: 155 on: RHCP or 2 (Typ.) ntenna gain enna noise 591609MH r linear z

: > 0dBi figure: < 1.5 5dB es_Hardwa are_Design 6 67 / 103 LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Active ant Active ant enna gain: >

enna embed

> 0dBi dded LNA ga ain: < 17dB VSWR: 2 Efficiency:

Max input Input impe Cable inse

(GSM850, LTE-FDD Cable inse

(DCS1800 B1/B2/B3/

Cable inse

(LTE-FDD 2

: > 30%

power: 50W W edance: 50 ertion loss: <

<1dB WCDMA B5

,EGSM900,W B13/B20/B2 B5/B8/B12/

ertion loss: <

<1.5dB

,WCDMA B 0, PCS1900

/B4/B25/B6 6) ertion loss: <

<2dB D B7) 5/B8, 26/B28) 1/B2/B4, LT E-FDD It is recomm ctive antenn mended to u na may gene use a passiv erate harmo e GNSS ant nics which w tenna when will affect the LTE B13 or e GNSS per r B14 is sup rformance. ac pported, as t he use of 5.3.2. Rec commend ded RF Co nnector fo or Antenn a Installat tion If RF conn provided by ector is use y Hirose. ed for ante enna connec ction, it is r recommend ed to use U.FL-R-SM T connecto r GSM/WCD DMA/LTE NOTE 1) Figu re 36: Dime ensions of t the U.FL-R-

-SMT Conne ector (Unit:

: mm) es_Hardwa are_Design 6 68 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n U.FL-LP se rial connecto ors listed in the followin g figure can n be used to match the U U.FL-R-SMT T. Figure 37:Mechan nicals of U.F FL-LP Conn nectors The followin ng figure des scribes the s space factor r of mated c onnector. Figure 38:S Space Facto or of Mated d Connector r (Unit: mm m) For more de etails, pleas e visit http://

/www.hirose e.com. es_Hardwa are_Design 6 69 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 6 E Electr R Radio rical, oChar Relia racter ability ristic y and d s wer supply a and voltage e on digital a and analog pins of the module are e 6.1. Abs solute Ma aximum Ratings Absolute m listed in the aximum rat following ta ings for pow able. Table 29: A Absolute Ma aximum Ra tings Parameter r VBAT_RF/

/VBAT_BB USB_VBU US Peak Curre ent of VBAT T_BB Peak Curre ent of VBAT T_RF Voltage at Digital Pins Min n.

-0.3 3

-0.3 3 0 0

-0.3 3 6.2. Pow wer Supp ply Rating gs Table 30: P Power Supp ply Ratings M Max. Un nit 4 4.7 5 5.5 0 0.8 1 1.8 2 2.3 V V A A V Parameter r Descri ption Conditi ions Min. Ty yp. Max x. Unit VBAT VBAT_ VBAT_ _BB and _RF tual input vo e kept betwe m and maxi ltages een the mum The act must be minimu values. 3 3.3 3.8 8 4.3 V es_Hardwa are_Design 7 70 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Voltage burst tr e drop during ransmission g Maximu level on um power co n EGSM900 ontrol nt upply curren Peak s

(during transm issionslot) Maximu level on um power co n EGSM900 ontrol IVBAT USB_VBU US USB co detectio onnection on 400 mV 1.8 8 2.0 A 3 3.0 5.0 0 5.25 5 V 6.3. Ope eration an nd Stora age Temp peratures s The operatio on and stora age tempera aturesare lis sted in the fo ollowing tabl e. Table 31: O Operation a nd Storage e Temperatu ures Parameter r Min n. Typ. Max. Uni t Operation Temperatur re Range1) ExtendedT Temperature eRange2) Storage Te emperature Range

-35 5

-40 0

-40 0

+25

+75

+85

+90 C C C NOTES 1. 2. 1) Within 2) Within voice, SM are also like Pout returns t again.

* mean 3. s under dev velopment. operation te extended te MS, data tra no effects o t might redu to the norm emperature emperature ansmission, on radio spe uce in their v mal operatio range, the m range, the emergency ectrum and n value and e n temperatu module is 3G module rem call*, etc. Th no harm to r exceed the s ure levels, GPP complia mains the ab here is no u radio networ specified tol the module ant. bility to esta nrecoverabl rk. Only one erances. W e will meet blish and m le malfunctio e or more pa When the tem 3GPP spec maintain a on. There arameters mperature cifications es_Hardwa are_Design 7 71 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 6.4. Curr rent Con nsumptio on The values of current co onsumption are shown below. Table 32: E EG95-E Cur rent Consu umption Parameter r Descript tion Con nditions Typ. Unit OFF stat te Pow wer down IVBAT AT+

+CFUN=0 (U USB disconn nected) GSM M DRX = 2 (

(USB discon nnected) GSM M DRX = 5 (

(USB suspe ended) GSM M DRX = 9 (

(USB discon nnected) Sleep sta ate WC DMA PF = 6 64 (USB dis connected) WC DMA PF = 6 64 (USB sus spended) WC DMA PF = 5 512 (USB di sconnected

) LTE E-FDD PF =

64 (USB dis sconnected)

) LTE E-FDD PF =

64 (USB su uspended) LTE E-FDD PF =

256 (USB d disconnected d) GSM M DRX = 5 (

(USB discon nnected) GSM M DRX = 5 (

(USB conne ected) Idle state e WC DMA PF = 6 64 (USB dis connected) WC DMA PF = 6 64 (USB con nnected) LTE E-FDDPF = 6 64 (USB dis connected) LTE E-FDDPF = 6 64 (USB con nnected) EGS SM900 4DL/

/1UL @ 32.3 35 dBm EGS SM900 3DL/

/2UL @ 32.1 16 dBm EGS SM900 2DL/

/3UL @ 30.5 57 dBm GPRS d transfer ata es_Hardwa are_Design 7 72 / 103 EG95_Serie 15 1.3 2.3 2.0 1.6 1.8 2.1 1.3 2.3 2.6 1.5 21.0 31.0 21.0 31.0 21.0 31.0 268 459 547 A mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n EGS SM900 1DL/

/4UL @ 29.4 45 dBm DCS S1800 4DL/

1UL @ 29.1 4 dBm DCS S1800 3DL/

2UL @ 29.0 07 dBm DCS S1800 2DL/

3UL @ 28.9 97 dBm DCS S1800 1DL/4 4UL @ 28.8 88 dBm EGS SM900 4DL/

/1UL PCL =

8 @ 26.88 dBm EGS SM900 3DL/

/2UL PCL =

8 @ 26.84 dBm EGS SM900 2DL/

/3UL PCL =

8 @ 26.76 dBm EGS SM900 1DL/

/4UL PCL =

8 @ 26.54 dBm DCS S1800 4DL/

1UL PCL =

2 @ 25.66 d dBm DCS S1800 3DL/

2UL PCL =

2 @ 25.59 d dBm DCS S1800 2DL/

3UL PCL =

2 @ 25.51 d dBm DCS S1800 1DL/4 4UL PCL =

2 @ 25.38 d dBm WC DMA B1 HS SDPA @ 22. 48 dBm WC DMA B1 HS SUPA @ 22. 29 dBm WC DMA B8 HS SDPA @ 22. 24 dBm WC DMA B8 HS SUPA @ 21. 99 dBm LTE E-FDD B1 @

@ 23.37 dBm m LTE E-FDD B3 @

@ 22.97 dBm m EDGE d transfer ata WCDMA A sfer datatrans LTE datatrans sfer LTE E-FDD B7 @

@ 23.17 dBm m LTE E-FDD B8 @

@ 23.04 dBm m LTE E-FDD B20 @

@ 23.21 dBm m LTE E-FDD B28A A @ 22.76 dB Bm GSM voice ca ll EGS SM900 PCL L = 5 @ 32.3 36 dBm DCS S1800PCL =

= 0 @ 29.19 9 dBm 631 177 290 406 517 167 278 385 492 169 256 341 432 586 591 498 511 736 710 775 651 699 714 271 181 mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA es_Hardwa are_Design 7 73 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n A WCDMA ll voice ca WC DMA B1 @

22.91 dBm WC DMA B8 @

23.14 dBm 632 546 mA mA Table 33: E EG95-NA Cu urrent Cons sumption OFF stat te Pow wer down Parameter r Descript tion Con nditions Typ. Unit IVBAT Idle state e Sleep sta ate WC DMA PF = 5 512 (USB di sconnected

) AT+

+CFUN=0 (U USB disconn nected) WC DMA PF = 6 64 (USB dis connected) WC DMA PF = 6 64 (USB sus spended) LTE E-FDD PF =

64 (USB dis sconnected)

) LTE E-FDD PF =

64 (USB su uspended) LTE E-FDD PF =

256 (USB d disconnected d) WC DMA PF = 6 64 (USB dis connected) WC DMA PF = 6 64 (USB con nnected) LTE E-FDDPF = 6 64 (USB dis connected) LTE E-FDDPF = 6 64 (USB con nnected) WC DMA B2 HS SDPA CH993 38 @ 22.45d dBm WC DMA B2 HS SUPACH993 38 @ 21.73d dBm WC DMA B4 HS SDPACH153 37 @ 23.05d dBm WC DMA B4 HS SUPACH153 37 @ 22.86d dBm A WCDMA datatrans sfer WC DMA B5 HS SDPA CH440 07 @ 23dBm m WC DMA B5 HS SUPACH440 07 @ 22.88d dBm LTE datatrans sfer LTE E-FDD B2 CH H1100 @ 23 3.29dBm LTE E-FDD B4 CH H2175 @ 23 3.19dBm 13 1.0 2.2 2.5 1.4 2.6 2.9 1.7 14.0 26.0 15.0 26.0 569 559 572 586 518 514 705 693 A mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA es_Hardwa are_Design 7 74 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n LTE E-FDD B5 CH H2525 @ 23 3.39dBm LTE E-FDD B12 C CH5060 @ 2 23.16dBm LTE E-FDD B13 C CH5230 @ 2 23.36dBm WC DMA B2 CH H9938 @ 23 3.34dBm WC DMA B4 CH H1537 @ 23 3.47dBm WC DMA B5 CH H4357 @ 23 3.37dBm A WCDMA ll voice ca Table 34: E EG95-EX Cu urrent Cons sumption OFF stat te Pow wer down Parameter r Descript tion Con nditions Typ. Unit IVBAT AT+

+CFUN=0 (U USB disconn nected) GSM M DRX = 2 (

(USB discon nnected) GSM M DRX = 5 (

(USB suspe end) GSM M DRX = 9 (

(USB discon nnected) Sleep sta ate WC DMA PF = 6 64 (USB dis connected) WC DMA PF = 6 64 (USB sus spend) WC DMA PF = 5 512 (USB di sconnected

) LTE E-FDD PF =

64 (USB dis sconnected)

) LTE E-FDD PF =

64 (USB su uspend) LTE E-FDD PF =

256 (USB d disconnected d) GSM M DRX = 5 (

(USB discon nnected) GSM M DRX = 5 (

(USB conne ected) Idle state e WC DMA PF = 6 64 (USB dis connected) WC DMA PF = 6 64 (USB con nnected) LTE E-FDDPF = 6 64 (USB dis connected) es_Hardwa are_Design 7 75 / 103 EG95_Serie 601 650 602 627 591 536 15 1.3 2.3 2.0 1.6 1.8 2.1 1.3 2.3 2.6 1.5 21.0 31.0 21.0 31.0 21.0 mA mA mA mA mA mA A mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n EGS SM900 4DL/

/1UL PCL =

8 @ 27.29 dBm 169.5 EGS SM900 3DL/

/2UL PCL =

8 @ 27.01 dBm 305.06 mA LTE E-FDDPF = 6 64 (USB con nnected) EGS SM900 4DL/

/1UL @ 33.0 06 dBm EGS SM900 3DL/

/2UL @ 32.9 93 dBm EGS SM900 2DL/

/3UL @ 31.1 1 dBm EGS SM900 1DL/

/4UL @ 29.7 78 dBm DCS S1800 4DL/

1UL @ 29.3 3 dBm DCS S1800 3DL/

2UL @ 29.3 3 dBm DCS S1800 2DL/

3UL @ 29.2 21 dBm DCS S1800 1DL/4 4UL @ 29.0 07 dBm GPRS d transfer ata EGS SM900 2DL/

/3UL PCL =

8 @ 26.86 dBm EGS SM900 1DL/

/4UL PCL =

8 @ 25.95 dBm DCS S1800 4DL/

1UL PCL =

2 @ 26.11 d dBm EDGE d transfer ata DCS S1800 3DL/

2UL PCL =

2 @ 25.8 dB Bm DCS S1800 2DL/

3UL PCL =

2 @ 25.7 dB Bm DCS S1800 1DL/4 4UL PCL =

2 @ 25.6 dB Bm WC DMA B1 HS SDPA @ 22. 48 dBm WCDMA A sfer datatrans WC DMA B1 HS SUPA @ 21. 9 dBm WC DMA B8 HS SDPA @ 22. 6 dBm WC DMA B8 HS SUPA @ 22. 02 dBm LTE E-FDD B1 @

@ 23.37 dBm m LTE datatrans sfer LTE E-FDD B3 @

@ 23.3 dBm LTE E-FDD B7 @

@ 23.2 dBm LTE E-FDD B8 @

@ 23.09 dBm m 31.0 247.9 450.8 536.4 618 144 253.4 355.4 455.7 434 548 135 244 349 455 485 458 556 520 605 667 783 637 mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA es_Hardwa are_Design 7 76 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n LTE E-FDD B20 @

@ 23.21 dBm m LTE E-FDD B28 @

@ 22.76 dBm m EGS SM900 PCL L = 5 @ 32.3 36 dBm DCS S1800PCL =

= 0 @ 29.5 d dBm WC DMA B1 @

23.4 dBm WC DMA B8 @

23.6 dBm GSM voice ca ll A WCDMA ll voice ca Table 35: E EG95-NAX C Current Con nsumption OFF stat te Pow wer down Parameter r Descript tion Con nditions Typ. Unit Sleep sta ate WC DMA PF = 5 512 (USB di sconnected

) AT+

+CFUN=0 (U USB disconn nected) WC DMA PF = 6 64 (USB dis connected) WC DMA PF = 6 64 (USB sus spend) LTE E-FDD PF =

64 (USB dis sconnected)

) LTE E-FDD PF =

64 (USB su uspend) LTE E-FDD PF =

256 (USB d disconnected d) WC DMA PF = 6 64 (USB dis connected) WC DMA PF = 6 64 (USB con nnected) LTE E-FDDPF = 6 64 (USB dis connected) LTE E-FDDPF = 6 64 (USB con nnected) WC DMA B2 HS SDPA @ 21. 64 dBm WC DMA B2 HS SUPA @ 21. 13 dBm WC DMA B4HS DPA @ 22.1 15 dBm WC DMA B4 HS SUPA @ 22. 21 dBm IVBAT Idle state e A WCDMA datatrans sfer es_Hardwa are_Design 7 77 / 103 EG95_Serie 646 661 259 149 494 608 11 1.1 2.0 2.4 1.5 2.6 2.8 1.8 17.4 34.3 17.8 34.7 547 543 554 541 mA mA mA mA mA mA A mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n LTE datatrans sfer WC DMA B5 HS SDPA @ 22. 39 dBm WC DMA B5 HS SUPA @ 22. 12 dBm LTE E-FDD B2 @

@ 23.07 dBm m LTE E-FDD B4 @

@ 23.09 dBm m LTE E-FDD B5 @

@ 23.31 dBm m LTE E-FDD B12 @

@ 23.30 dBm m LTE E-FDD B13 @

@ 23.32 dBm m LTE E-FDD B25 @

@ 23.03 dBm m LTE E-FDD B26 @

@ 22.97 dBm m WC DMA B2 @

22.89 dBm WC DMA B4 @

22.76 dBm WC DMA B5 @

23.03 dBm A WCDMA ll voice ca Table 36: E EG95-NAXD D Current Co onsumption n OFF stat te Pow wer down Sleep sta ate WC DMA PF = 5 512 (USB di sconnected

) IVBAT AT+

+CFUN=0 (U USB disconn nected) WC DMA PF = 6 64 (USB dis connected) WC DMA PF = 6 64 (USB sus spend) LTE E-FDD PF =

64 (USB dis sconnected)

) LTE E-FDD PF =

64 (USB su uspend) LTE E-FDD PF =

256 (USB d disconnected d) Idle state e WC DMA PF = 6 64 (USB dis connected) WC DMA PF = 6 64 (USB con nnected) es_Hardwa are_Design 7 78 / 103 EG95_Serie 502 509 691 713 580 627 619 693 628 591 577 516 11 1.1 2.0 2.4 1.5 2.6 2.8 1.8 17.4 34.3 mA mA mA mA mA mA mA mA mA mA mA mA A mA mA mA mA mA mA mA mA mA Parameter r Descript tion Con nditions Typ. Unit LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n LTE E-FDDPF = 6 64 (USB dis connected) LTE E-FDDPF = 6 64 (USB con nnected) WC DMA B2 HS SDPA @ 21. 64 dBm WC DMA B2 HS SUPA @ 21. 13 dBm WC DMA B4HS DPA @ 22.1 15 dBm WC DMA B4 HS SUPA @ 22. 21 dBm WC DMA B5 HS SDPA @ 22. 39 dBm WC DMA B5 HS SUPA @ 22. 12 dBm LTE E-FDD B2 @

@ 23.07 dBm m LTE E-FDD B4 @

@ 23.09 dBm m LTE E-FDD B5 @

@ 23.31 dBm m LTE E-FDD B12 @

@ 23.30 dBm m LTE E-FDD B13 @

@ 23.32 dBm m LTE E-FDD B25 @

@ 23.03 dBm m LTE E-FDD B26 @

@ 22.97 dBm m A WCDMA datatrans sfer LTE datatrans sfer Table 37: E EG95-AUX C Current Con nsumption Parameter r Descript tion Con nditions Typ. Unit OFF stat te Pow wer down AT+

+CFUN=0 (U USB disconn nected) GSM M DRX = 2 (

(USB discon nnected) IVBAT GSM M DRX = 5 (

(USB suspe end) Sleep sta ate GSM M DRX = 9 (

(USB discon nnected) WC DMA PF = 6 64 (USB dis connected) WC DMA PF = 6 64 (USB sus spend) es_Hardwa are_Design 7 79 / 103 EG95_Serie 17.8 34.7 547 543 554 541 502 509 691 713 580 627 619 693 628 10 1.2 2.3 2.0 1.5 1.8 2.1 mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA A mA mA mA mA mA mA LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Idle state e GPRS d transfer ata WC DMA PF = 5 512 (USB di sconnected

) LTE E-FDD PF =

64 (USB dis sconnected)

) LTE E-FDD PF =

64 (USB su uspend) LTE E-FDD PF =

256 (USB d disconnected d) GSM M DRX = 5 (

(USB discon nnected) GSM M DRX = 5 (

(USB conne ected) WC DMA PF = 6 64 (USB dis connected) WC DMA PF = 6 64 (USB con nnected) LTE E-FDDPF = 6 64 (USB dis connected) LTE E-FDDPF = 6 64 (USB con nnected) GSM M850 4DL/1 UL @ 32.48 8 dBm GSM M850 3DL/2 2UL @ 31.89 9dBm GSM M850 2DL/3 3UL @ 29.45 5 dBm GSM M850 1DL/4 4UL @ 28.31 1 dBm EGS SM900 4DL/

/1UL @ 33.1 17 dBm EGS SM900 3DL/

/2UL @ 32.1 16 dBm EGS SM900 2DL/

/3UL @ 29.7 77 dBm EGS SM900 1DL/

/4UL @ 28.5 59 dBm DCS S1800 4DL/

1UL @ 30.1 9 dBm DCS S1800 3DL/

2UL @ 29.2 23 dBm DCS S1800 2DL/

3UL @ 27.1 9 dBm DCS S1800 1DL/4 4UL @ 26.1 4 dBm PCS S1900 4DL/

1UL @ 30.2 22 dBm PCS S1900 3DL/2 2UL @ 29.4 48 dBm PCS S1900 2DL/3 3UL @ 27.5 50 dBm 1.3 2.3 2.6 1.5 18 28 18 28 18 29 217.9 372.3 432.9 513.9 235.1 387.7 446.5 540.0 154.4 258.0 332.4 419.1 155.0 259.5 333.1 mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA es_Hardwa are_Design 8 80 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n PCS S1900 1DL/4 4UL @ 26.4 44 dBm 416.8 GSM M850 4DL/1 UL PCL = 8 8 @ 25.75 dB Bm 161.8 GSM M850 3DL/2 2UL PCL = 8 8 @ 25.49 dB Bm 291.8 GSM M850 2DL/3 3UL PCL = 8 8 @ 23.26 dB Bm 410.2 GSM M850 1DL/4 4UL PCL = 8 8 @ 22.01 dB Bm 520.5 EGS SM900 4DL/

/1UL PCL =

8 @ 26.04 dBm 161.5 EGS SM900 3DL/

/2UL PCL =

8 @ 25.86 dBm 294.6 EGS SM900 2DL/

/3UL PCL =

8 @ 23.62 dBm 411.4 EGS SM900 1DL/

/4UL PCL =

8 @ 22.27 dBm 520.8 DCS S1800 4DL/

1UL PCL =

2 @ 26.12 d dBm 139.4 EDGE d transfer ata DCS S1800 3DL/

2UL PCL =

2 @ 25.02 d dBm 250.7 DCS S1800 2DL/

3UL PCL =

2 @ 22.75 d dBm 355.3 DCS S1800 1DL/4 4UL PCL =

2 @ 21.47 d dBm 452.1 PCS S1900 4DL/

1UL PCL = 2 2 @ 26.36 d dBm 138.3 PCS S1900 3DL/2 2UL PCL = 2 2 @ 25.2 dB Bm 248.2 PCS S1900 2DL/3 3UL PCL = 2 2 @ 22.94 d dBm 351.5 PCS S1900 1DL/4 4UL PCL = 2 2 @ 21.67 d dBm 448.8 WCDMA A sfer datatrans WC DMA B1 HS SDPA @ 22. 30 dBm WC DMA B1 HS SUPA @ 21. 50 dBm WC DMA B2 HS SDPA @ 22. 14 dBm WC DMA B2 HS SUPA @ 21. 18 dBm WC DMA B5 HS SDPA @ 22. 6 dBm WC DMA B5 HS SUPA @ 21. 45 dBm WC DMA B8 HS SDPA @ 21. 92 dBm WC DMA B8 HS SUPA @ 21. 93 dBm 609.6 640.5 557.4 539.4 588.2 545.2 578.1 592.5 mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA es_Hardwa are_Design 8 81 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n LTE E-FDD B1 @

@ 22.96 dBm m LTE E-FDD B2 @

@ 22.79 dBm m LTE E-FDD B3 @

@ 23.09 dBm m LTE E-FDD B4 @

@ 22.83 dBm m LTE E-FDD B5 @

@ 23.05 dBm m LTE E-FDD B7 @

@ 22.71 dBm m LTE E-FDD B8 @

@ 22.80 dBm m LTE E-FDD B28 @

@ 22.84 dBm m LTE E-FDD B66 @

@ 22.73 dBm m GSM M850 PCL5

@32.57dBm m EGS SM900 PCL L5 @33.21dB Bm DCS S1800 PCL0 0 @30.24dB Bm PCS S1900 PCL0 0 @30.33dB Bm WC DMA B1 @2 22.93dBm WC DMA B2 @2 22.95dBm WC DMA B5 @2 22.54dBm WC DMA B8 @2 22.47dBm LTE datatrans sfer GSM voice ca ll WCDMA A ll voice ca 777.4 634.4 697.9 704.6 657.1 765.3 635.3 670.0 725.9 227.8 253.8 168.0 166.8 656.2 579.8 589.8 627.8 54 54 53 32 mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA Table 38: G GNSS Curre ent Consum mption of EG G95 Parameter r Descript tion Co onditions Typ. Unit IVBAT

(GNSS) Co ld start @ P Passive Ante enna Ho t Start @ Pa assive Anten nna Los st state @ P Passive Ante enna Op pen Sky @ P Passive Ante enna Searchin ng

(AT+CFU UN=0) Tracking g

(AT+CFU UN=0) es_Hardwa are_Design 8 82 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 6.5. RF O Output P Power The followin Table 39: R RF Output P Power ng table sho ws the RF o output powe r of EG95 m module. Frequency y Max. Min. GSM850/E EGSM900 33 dBm m 2dB 5 dBm 5dB DCS1800/

/PCS1900 30 dBm m 2dB 0 dBm 5dB GSM850/E EGSM900(8

-PSK) 27 dBm m 3dB 5 dBm 5dB DCS1800/

/PCS1900(8 8-PSK) 26 dBm m 3dB 0 dBm 5dB WCDMA B B1/B2/B4/B5 5/B8 24 dBm m+1/-3dB

<-49 dB m LTE-FDD B B8/B12/B1 B1/B2/B3/B4 13/B20/B25/

4/B5/B7/

/B26/B28/B6 66 23 dBm m 2dB

<-39 dB m NOTE The followin In n GPRS 4 sl G GSM specific ots TX mod cation as des e, the maxim scribed in C mum output Chapter 13.1 power is re 16 of 3GPP educed by 3. TS 51.010-1

.0dB. Thede 1. esign confor ms to the 6.6. RF R Receivin ng Sensit tivity ng tables sho ow the cond ducted RF re eceiving sen nsitivity of EG G95 module e. Table 40: E EG95-E Con nducted RF Receiving Sensitivity Frequency y Prim mary Diversity y SIMO 3G GPP EGSM900

-108. 6 dBm DCS1800

-109. 4 dBm NA NA NA NA

-102 2 dBm

-102 2dBm WCDMA B B1

-109. 5 dBm

-110 dBm m

-112.5 dBm m

-106 6.7 dBm WCDMA B B8

-109. 5 dBm

-110 dBm m

-112.5 dBm m

-103 3.7 dBm es_Hardwa are_Design 8 83 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n LTE-FDD B B1 (10 MHz z)

-97.5 5 dBm

-98.3 dB m

-101.4 dBm m

-96. 3 dBm LTE-FDD B B3 (10 MHz z)

-98.3 3 dBm

-98.5 dB m

-101.5 dBm m

-93. 3 dBm LTE-FDD B B7 (10 MHz z)

-96.3 3 dBm

-98.4 dB m

-101.3 dBm m

-94. 3 dBm LTE-FDD B B8 (10 MHz z)

-97.1 dBm

-99.1 dB m

-101.2 dBm m

-93. 3 dBm LTE-FDD B B20 (10 MH Hz)

-97 d dBm

-99 dBm

-101.3 dBm m

-93. 3 dBm LTE-FDD B B28A (10 M MHz)

-98.3 3 dBm

-99 dBm

-101.4 dBm m

-94. 8 dBm Table 41: E EG95-NA Co onducted R RF Receivin g Sensitivit ty Frequency y Prim mary D Diversity SIM MO 3GPP P WCDMA B B2

-110 dBm

110 dBm

-112 2.5 dBm

-104.7 7 dBm WCDMA B B4

-110 dBm

110 dBm

-112 2.5 dBm

-106.7 7 dBm WCDMA B B5

-111 dBm

111 dBm

-113 3 dBm

-104.7 7 dBm LTE-FDD B B2 (10 MHz

-98 d dBm

-9 99 dBm

-102 2.2 dBm

-94.3 d dBm LTE-FDD B B4 (10 MHz

-97.8 8 dBm

-9 99.5 dBm

-102 2.2 dBm

-96.3 d dBm LTE-FDD B B5 (10 MHz

-99.6 6 dBm

100.3 dBm

-103 3 dBm

-94.3 d dBm LTE-FDD B B12 (10 MH z)

-99.5 5 dBm

100 dBm

-102 2.5 dBm

-93.3 d dBm LTE-FDD B B13 (10 MH z)

-99.2 2 dBm

100 dBm

-102 2.5 dBm

-93.3 d dBm Table 42: E EG95-EX Co onducted R F Receiving g Sensitivit ty Frequency y Prima ry D Diversity SIM MO 3GPP P EGSM900

-109.8 dBm N NA DCS1800

-109.8 dBm N NA NA NA

-102 d dBm

-102d bm WCDMA B B1

-110 d Bm

111 dBm

-112 2.5 dBm

-106.7 7 dBm WCDMA B B8

-110 d Bm

111 dBm

-112 2.5 dBm

-103.7 7 dBm LTE-FDD B B1 (10 MHz z)

-98.7 d dBm

-9 98.8 dBm

-102 2.4 dBm

-96.3 d dBm es_Hardwa are_Design 8 84 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n LTE-FDD B B3 (10 MHz z)

-98.3 d dBm

-9 99.5 dBm

-102 2.5 dBm

-93.3 d dBm LTE-FDD B B7 (10 MHz z)

-97.5 d dBm

-9 98.4 dBm

-100 0.3 dBm

-94.3 d dBm LTE-FDD B B8 (10 MHz z)

-98.7 d dBm

-9 99.6 dBm

-102 2.2 dBm

-93.3 d dBm LTE-FDD B B20 (10 MH Hz)

-97 dB Bm

-9 97.5 dBm

-102 2.2 dBm

-93.3 d dBm LTE-FDD B B28 (10 MH Hz)

-98.2 d dBm

-9 99.5 dBm

-102 2 dBm

-94.8 d dBm Table 43: E EG95-NAX C Conducted RF Receivi ng Sensitiv vity Frequency y Pri mary Diversity y SIM MO 3GPP P WCDMA B B2

-11 0 dBm

-110 dBm m

-112 2.5 dBm

-104.7 7 dBm WCDMA B B4

-11 0 dBm

-110 dBm m

-112 2.5 dBm

-106.7 7 dBm WCDMA B B5

-11 1 dBm

-111 dBm m

-113 3 dBm

-104.7 7 dBm LTE-FDD B B2 (10 MHz

-98 8 dBm

-99 dBm

-102 2.2 dBm

-94.3 d dBm LTE-FDD B B4 (10 MHz

-97 7.8 dBm

-99.5 dBm m

-102 2.2 dBm

-96.3 d dBm LTE-FDD B B5 (10 MHz

-99 9.4 dBm

-100 dBm m

-102 2.7 dBm

-94.3 d dBm LTE-FDD B B12 (10 MH z)

-99 9.5 dBm

-100 dBm m

-102 2.5 dBm

-93.3 d dBm LTE-FDD B B13 (10 MH z)

-99 9.2 dBm

-100 dBm m

-102 2.5 dBm

-93.3 d dBm LTE-FDD B B25(10 MHz z)

-97 7.6 dBm

-99 dBm

-102 2.2 dBm

-92.8 d dBm LTE-FDD B B26(10 MHz z)

-99 9.1 dBm

-99.9 dBm m

-102 2.7 dBm

-93.8 d dBm Table 44: E EG95-NAXD D Conducted d RF Receiv ving Sensit tivity Frequency y Pri mary Diversity y SIM MO 3GPP P WCDMA B B2

-11 0 dBm

-110 dBm m

-112 2.5 dBm

-104.7 7 dBm WCDMA B B4

-11 0 dBm

-110 dBm m

-112 2.5 dBm

-106.7 7 dBm WCDMA B B5

-11 1 dBm

-111 dBm m

-113 3 dBm

-104.7 7 dBm LTE-FDD B B2 (10 MHz

-98 8 dBm

-99 dBm

-102 2.2 dBm

-94.3 d dBm es_Hardwa are_Design 8 85 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n LTE-FDD B B4 (10 MHz

-97 7.8 dBm

-99.5 dBm m

-102 2.2 dBm

-96.3 d dBm LTE-FDD B B5 (10 MHz

-99 9.4 dBm

-100 dBm m

-102 2.7 dBm

-94.3 d dBm LTE-FDD B B12 (10 MH z)

-99 9.5 dBm

-100 dBm m

-102 2.5 dBm

-93.3 d dBm LTE-FDD B B13 (10 MH z)

-99 9.2 dBm

-100 dBm m

-102 2.5 dBm

-93.3 d dBm LTE-FDD B B25(10 MHz z)

-97 7.6 dBm

-99 dBm

-102 2.2 dBm

-92.8 d dBm LTE-FDD B B26(10 MHz z)

-99 9.1 dBm

-99.9 dBm m

-102 2.7 dBm

-93.8 d dBm GSM850 EGSM900 DCS1800 PCS1900 Table 45: E EG95-AUX C Conducted RF Receivi ng Sensitiv vity Frequency y Pri mary Diversity y SIM MO 3GPP P

-10 09.1 dBm NA

-10 09.7 dBm NA

-11 0.0dBm NA

-10 09.4 dBm NA WCDMA B B1

-10 09.2 dBm

-109.5 dB Bm WCDMA B B2

-10 09.8 dBm

-111 dBm m WCDMA B B5

-11 0 dBm

-111 dBm m WCDMA B B8

-11 0 dBm

-111 dBm m NA NA NA NA NA NA NA NA

-102 d dBm

-102 d dBm

-102d Bm

-102d Bm

-106.7 7 dBm

-104.7 7 dBm

-104.7 7 dBm

-103.7 7 dBm LTE-FDD B B1 (10MHz)

-97 7.2dBm

-98.9dBm m

-10 1.2dBm

-96.3d dBm LTE-FDD B B2 (10MHz)

-97 7.7dBm

-98.9dBm m

-10 1.7dBm

-94.3d dBm LTE-FDD B B3 (10MHz)

-98 8.2dBm

-99.1dBm m

-102 2.2dBm

-93.3d dBm LTE-FDD B B4 (10MHz)

-97 7.7dBm

-98.7dBm m

-10 1.2dBm

-96.3d dBm LTE-FDD B B5 (10MHz)

-99 9.2dBm

-99.7dBm m

-102 2.7dBm

-94.3d dBm LTE-FDD B B7 (10MHz)

-96 6.7dBm

-97.1dBm m

-99

.7dBm

-94.3d dBm LTE-FDD B B8 (10MHz)

-98 8.0dBm

-98.4dBm m

-102 2.2dBm

-93.3d dBm LTE-FDD B B28 (10MHz z)

-98 8.7dBm

-98.5dBm m

-10 1.7dBm

-94.8d dBm es_Hardwa are_Design 8 86 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n LTE-FDD B B66 (10MHz z)

-97 7.7dBm

-98.8dBm m

-10 1.2dBm

-95.8d dBm 6.7. Elec ctrostatic c Discha arge e is not prote dling precau procedures that incorpo ected again utions that ty must be a orates the mo st electrosta ypically app applied thro odule. atic discharg ly to ESD se oughout the ge (ESD) in ensitive com e processing general. Co mponents. Pr g, handling onsequently, roper ESD h and opera

, it is subjec ct handling and d ation of any y ng table sho ws the mod ules electro ostatic disch arge charac cteristics. Table 46: E Electrostatic c Discharge e Character ristics(25C C, 45% Rela tive Humid ity) Tested Int terfaces Co ontact Disc charge Air Disch harge Unit VBAT, GN ND All Antenn a Interfaces s 5 5 4 4 Other Inter rfaces 0 0.5 10 8 1 kV kV kV 6.8. The rmal Con nsiderati ion achieve be or thermal co tter perform onsideration mance of the n:

e module,it is recomme ended to co omply with t the following g stomers PC ally high pow place comp o facilitate a apply solde ure better he ference grou many as po sure the grou ing to custo opposite sid eatsink shou while, a therm e/PCB. CB design, wer compon ponents on dding of hea er mask on t eat dissipatio und of the ar ossible for b und pads of mers applic e of the PCB uld be desig mal pad with please kee ents such a the opposit atsink when he opposite on performa rea where th better heat d the module cation deman B area wher gned with as h high therm p placemen s ARM proc te side of th necessary. side of the ance. he module is issipation. e and PCB a nds, the hea re the modu s many fins mal conduct nt of the mo essor, audio he PCB area odule away o power amp a where the y from heati plifier, power e module is s, ing sources c. r supply, etc mounted, in n PCB area w where the m odule is mo unted, so as s s mounted s hould be co omplete, and d add ground d are fully conn atsink can be le is mounte as possible ivity should nected. e mounted o ed, or both o e to increase be used be on the top of of them. e heat dissi etween the h f the module e, ipation area a. heatsink and d es_Hardwa are_Design 8 87 / 103 The module to ESD han packaging application t The followin In order to principles fo On cus especia Do not order to Do not to ensu The ref vias as Make s Accord or the o The he Meanw module EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n The followin them accord ng shows tw ding to their wo kinds of h application eatsink desi structure. igns for refe rence and c customers ca an choose o oneor both o of EG95 Module e Heatsink H Heatsink Thermal Pad Shielding C Cover App plication Board Appl lication Board F Figure 39: R Referenced d Heatsink Design (He eatsink at t the Top of the Module e) EG G95 Module Thermal Pad The ermal Pad Heatsink k A Application Boa ard Shielding Co over A Application Boa ard Heatsink Figure 40: Refere enced Heat tsink Desig gn (Heatsin nk at the Ba ackside of Customers s PCB) he module T m maximum tem re educed perf offers the b mperature of formance (s best perform f the BB chip such as RF mance when p reaches or F output po n the intern r exceeds 10 ower, data nal BB chip 05C, the m rate, etc.). stays below odule works When the w 105C. W s normal but maximum When the t provides BB chip es_Hardwa are_Design 8 88 / 103 NOTE EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n te emperature r o network co to de esign shoul reaches or e onnected sta ld be maxim exceeds 115 ate after the mally optim 5C, the mod e maximum mized to ma dule will disc temperature ake sure th connect from e falls below he maximum m the netwo w 115C. Th m BB chip ork, and it wi herefore, the temperature ll recover e thermal e always m maintains be te emperature f low 105C.C from the firs Customers c st returned v can execute alue. e AT+QTEM MP command d and get th he maximum m BB chip es_Hardwa are_Design 8 89 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 7 M This chapte mm,and the Mecha anica al Dim mensi ions er describes e dimensiona s the mech al tolerances hanical dime s are 0.05m ensions of mm unless o the module otherwise sp e.All dimens pecified. sions are m measured in n 7.1. Mec chanical Dimensi ions of th he Modu ule 25 0.15 2.3 300. 2 Pin 1 5 5 1 1

. 0 0 9 9 2 2 Figure e 41: Modu le Top and Side Dimen nsions es_Hardwa are_Design 9 90 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 250 0.15 2. 75 1.10 1.95 7. 45 7.15 5 1.10 0 9

. 3 0.50 1

.58 4.85 0.33 3 2.93 1.44 4 1.00 5. 10 1.70 0. 20 0.85 8.50 0 1

.10 5 5 1 1

. 0 0 9 9 2 2 1.90 1.10 4.25 0.85 1.70 5.95 1.0 00 1

.00 0.7 70 1.70 1.15 0.55 0.50 5 5 1 1

. 1 1 2.75 5 62x0 0.7 40x1. 0 1.70 62x1

.15 4 40x1.0 1.70 1.7 0 1.70 0.40 0.40 F igure 42: E G95-E Mod dule Bottom m Dimension ns (TopView w) EG95_Serie es_Hardwa are_Design 9 91 / 103 LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 250 0.15 2. 75 1.10 1.95 7. 45 7.15 5 1.10 0.50 0 9

. 3 1.5 58 4.85 0.33 3 2.93 5 1

. 0 9 2 1. 10 1.90 1.10 0.7 70 1.70 1 1.15 0.55 1.70 0.2 20 1.63 3 1.00 8.50 0 5. 10 0.85 5.95 4.25 0.85 1.70 1.0 00 1

.00 0.50 5 5 1 1

. 1 1 2.75 5 62x0.7 40x1.0 1.70 62x1.15 40x1

.0 1.70 1.7 0 1.70 0.40 0.40 Fig gure 43: EG G95-EX Mod dule Bottom m Dimensio ons (Top Vie ew) EG95_Serie es_Hardwa are_Design 9 92 / 103 LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n ge warpage

, EG95-NAX e level of the X, EG95-NA e module con AXD, EG95 nforms to th 5-AUX mod e JEITA ED dule bottom D-7306 stand dimension dard. s are the same as NOTES 1. 2. E

. The packa

. EG95-NA G95-EX. 7.2. Rec commend ded Foot tprint es_Hardwa are_Design 9 93 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 7 7.45 7.15 1.10 0 1.95 1. 10 0 9

. 3 0.50 0.50 PIN 1 4.85 5 1

. 0 9 2 1.10 1.90 1.10 1.00 5. 10 1.70 0.20 8.50 0.85 5.95 1.00 0 1.0 00 4.25 0.85 1.70 0.50 5 1

. 1 0.50 2.75 0.70 1.70 1.15 0.55 62x0.7 7 40x1. 0 1.70 62x1.15 5 40x x1.0 1.70 1.70 1.70 0.40 0.40 Figure 44: Recom mended Fo ootprint (To op View) NOTE Fo co or easymai omponents intenance o in thehost P of the mod PCB. ule, please e keep abo out 3mm be etween the e module a nd other es_Hardwa are_Design 9 94 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 7.3. Top and Bot ttom View ws of the e Module e F Figure 45: T Top View of f the Modul e Figure e 46: EG95-E E Bottom V View of the M Module es_Hardwa are_Design 9 95 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Figure 47: EG95-E EX Bottom V View of the Module NOTES renderings ectel. 1. 2. These are from Que

. EG95-NA, EG95-EX X. of the modu ule. For auth hentic appea arance, plea ase refer to the module received EG95-NAX X, EG95-NA AXD, EG95 5-AUX mod ule bottom dimensions s are the s same as es_Hardwa are_Design 9 96 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 8 S Storag P Packa ge, M aging Manuf factur ring a and 8.1. Stor rage The module requirement 1. Recomm should b 2. The sto e is provide ts are show d with vacu n below. mended Sto be 35%60%

orage Cond

%. 3. The floo humidity process module cabinet) or life of the y is below sed in reflow should be s

). 4. The mo the follo odule should owing circum mstances:

uum-sealed packaging. MSL of the e module is rated as 3. Thestorage e ition: The t temperature should be 235C an nd the relat ive humidity y rage life (in vacuum-sea aled packag ging) is 12 m months in Re ecommended d Storage C Condition. e module is 60%. After w soldering o stored in an e 168 hours 1 r the vacuu or other high environmen

)in a plant w um-sealed p h-temperatu t where the where the te packaging i ure operation relative hum emperature is removed ns within 16 midity is less is 23 5C

, the modu 68 hours. Ot s than 10% (

and relative e ule must be e therwise, the e e.g. a drying g be pre-bak ked to avoid blistering, c cracks and in nner-layer s separation in n PCB unde r The Vio Vac Bef If neede 5. e module is olation of the cuum-sealed fore module not stored in e third requir d packaging repairing. n Recomme rement abov g is broken, o ended Storag ve occurs;

or the packa ge Condition n;

aging has be een removed d for over 24 4 hours;

ed, the pre-b baking shou ld follow the e requiremen ntsbelow:

The All put e module sh modules mu t in a dry env hould be bak ust be solde vironment su ked for 8 hou ered to PCB uch as in a d 5C;

urs at 120 within 24 ho ours after th

. drying oven he baking, o therwise the ey should be e es_Hardwa are_Design 9 97 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n NOTES 1. 1) This fl 2. To avoid to the a the relat after the ready fo 3. Please the bak procedu nly applicab loor life is on layer separ d blistering, time. If the t ir for a long e is over 60%

tive moisture e package is s removed. A or soldering. take the mo odule out of rter baking king. If sho ure. 8.2. Man nufacturi ng and S Soldering g le when the ration and ot temperature

%, It is reco And do not re environmen ther solderin e and moistu mmended to emove the p nt conforms ng issues, it ure do not co o start the so packages of to IPC/JED is forbidden onform to IP older reflow tremendous EC J-STD-0 n to expose PC/JEDEC J process wit s modules if 033. the modules s J-STD-033 o r hin 24 hours s ot f they are no the packag time is de ing and put esired, pleas it on high-te se refer to emperature IPC/JEDEC resistant fix CJ-STD-033 xtures before e 3 for baking g queegee to nings and as to produc s of stencil f nt [4]. Push the sq stencil ope properlyso a thethicknes todocumen It is sugges temperature recommend been comp related para apply the s then penetr ce a clean st for the modu solder paste rate to the tencil surfac ule is recom e on the su PCB. The ce on a singl mended to b rface of ste force on t e pass. To e be0.130.15 encil, thus m the squeege ensure the m 5 mm. For m making the p ee should module solde more details, paste fill the e be adjusted d ering quality y, r please refe sted that th e is 246 C ded that the pleted. The ameters are he peak refl C. To avoid module sho recommend shown belo low tempera damage to ould be mou ded reflow s ow. ature is 238 o the modu unted after soldering th 8246 C, a le caused b reflow solde hermal profi and the abs by repeated ering for the le (lead-free solute maxi d heating, it e other side e reflow so imum reflow w t is strongly y of PCB has s ldering) and d Temp. (

(C) 246 238 220 200 150 100 S Soak Zone A Max slo ope: 1 to 3C/s Reflow Max slo 2 to 3C w Zone ope:

C/s C Coolin

-1.5 to ng down slope:

o -3C/s B D es_Hardwa are_Design 9 98 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Figu ure 48: Rec commende ed Reflow S Soldering T Thermal Pr rofile Table 47: R Recommend ded Therma al Profile Pa arameters Soak time

(between A A and B: 150 C and 200 C) 70120 s Recomme ndation 13 C/s 23 C/s 4570 s 238 C to 2 246 C

-1.5 to -3 C C/s 1 Reflow tim me (D: over 2 220C) Factor Soak Zone e Max slope Reflow Zo one Max slope Max tempe erature Cooling do own slope Reflow Cy ycle Max reflow w cycle 8.3. Pac kaging EG95 is pac the devices The reel is packaging d ckaged in a are ready to vacuum-se o be soldere ealed bag wh ed onto the a hich is ESD application. protected. T The bag sho ould not be opened unti il 330mm in d details, mea diameter and d each reel m. sured in mm contains 25 50pcs modu ules. The fol lowing figur res show the e es_Hardwa are_Design 9 99 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Figure 49

: Tape Spec cifications 48.5 0 0 1 13 44.5+0.20 0

-0.00 Figure 50 0: Reel Spec cifications Co over tape Dir rection of fe eed es_Hardwa are_Design 1 00 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 1083 Carr pack rier tape king mod dule Carrier unfoldin tape ng F igure 51: Ta ape and Re eel Direction ns es_Hardwa are_Design 1 01 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 9 A Appen ndix A A Ref feren nces Table 48: R Related Doc cuments SN Do ocument Na ame Rema ark Qu Ap uectel_EC2x pplication_N x&EG9x_Po ote ower_Manag gement_ Qu Ma uectel_LTE_ anual _Standard_A AT_Comman nds_ Qu uectel_LTE_ _Standard_G GNSS_Appli ication_Note e Powe for EC R2.1, er managem C25 series, EG95 serie ment applicat EC21 series es and EG91 tion note s, EC20 1 series AT co Stand ommands m dard module anual for LT es TE GNSS Stand S applicat tion note dardmodules s for LTE Qu uectel_Modu ule_Seconda ary_SMT_U User_Guide Modu ule secondar ry SMT user r guide Qu uectel_RF_L Layout_App lication_Not te RF la ayout applica ation note Qu uectel_LTE_ _Module_Th ermal_Desi gn_Guide

[7]

Qu uectel_UMT S&LTE_EVB B_User_Gu ide Therm LTE-A mal design g A and Autom guide for LTE motive modu E standard, les UMTS forUM S&LTE EVB MTS&LTE m B user guide modules Table 49: T Terms and A Abbreviatio ons Abbreviatio on Descrip ption Adaptiv ve Multi-rate e Bits Pe r Second Coding Scheme Circuit S Switched Da ata Clear T To Send CHAP Challen nge Handsha ake Authent tication Prot ocol DC-HSPA+

Dual-ca arrier High S Speed Packe et Access es_Hardwa are_Design 1 02 / 103 EG95_Serie

[1]

[2]

[3]

[4]

[5]

[6]

AMR bps CS CSD CTS LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n DFOTA Delta F irmware Up grade Over The Air GLONASS Sputnikovay a Sistema, t the Russian Global DL DTR DTX EFR ESD FDD FR GMSK GNSS GPS GSM HR HSPA HSDPA HSUPA I/O Inorm LED LNA LTE MIMO MO MS Downlin nk Data Te erminal Read dy Discont tinuous Tran nsmission Enhanc ced Full Rate e Electros static Discha arge Freque ncy Division n Duplex Full Ra te GLOba Navigat lnayaNAvig tion Satellite atsionnayaS e System Gaussia an Minimum m Shift Keyin ng Global Navigation S Satellite Sys stem Global Positioning System Global System for Mobile Com mmunications s Half Ra ate High Sp peed Packe t Access High Sp peed Downl ink Packet A Access High Sp peed Uplink Packet Acc cess Input/O Output Normal Current Light E mitting Diod de Low No oise Amplifie er Long Te erm Evolutio on Multiple e Input Multi ple Output Mobile Originated Mobile Station (GS SM engine) es_Hardwa are_Design 1 03 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n MSL MT PAP PCB PDU PPP QAM QPSK RF RHCP Rx SMS TDD TX UL UMTS URC

(U)SIM Vmax Vnorm Vmin VIHmax VIHmin VILmax VILmin Moistur re Sensitivity y Level Mobile Terminated Passwo ord Authenti cation Proto ocol Printed Circuit Boa rd Protoco ol Data Unit Point-to o-Point Proto ocol Quadra ature Amplitu ude Modulat tion Quadra ature Phase Shift Keying g Radio F Frequency Right H Hand Circula arly Polarized d Receive e Short M Message Ser rvice Time D ivision Dupl exing Transm mitting Direct tion Uplink Univers sal Mobile Te elecommuni ications Sys stem Unsolic cited Result Code

(Univer rsal) Subscri iber Identity Module Maximu um Voltage V Value Normal Voltage Va lue Minimu m Voltage V Value Maximu um Input Hig gh Level Vol ltage Value Minimu m Input Hig h Level Volt tage Value Maximu um Input Low w Level Volt tage Value Minimu m Input Low w Level Volta age Value es_Hardwa are_Design 1 04 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n Absolut te Maximum m Input Volta age Value Absolut te Minimum Input Voltag ge Value Minimu m Output H igh Level Vo oltage Value e Maximu um Output L Low Level Vo oltage Value e Minimu m Output Lo ow Level Vo oltage Value Voltage e Standing W Wave Ratio WCDMA Wideba and Code Di ivision Multip ple Access VImax VImin VOHin VOLmax VOLmin VSWR es_Hardwa are_Design 1 05 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 10 0 App pendix x B G GPRS S Cod ding S Schem mes Table 50: D Description of Differen t Coding Sc chemes Scheme Code Rate e USF Pre-coded d USF BCS Tail Coded Bit ts Punctured d Bits Data Rate Kb/s Radio Blo ock excl.US F and BCS 1 81 268 C CS-1 CS-2 CS-

-3 CS-4 2/3 3/4 1/

/2 3 3 4 0 4 4 56 0 3 6 16 4 588 132 9

.05 13.4 1 3 12 428 16

456 21.4 3 6 312 16 4 676 220 15.6 6 es_Hardwa are_Design 1 06 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 11 App pendix x C G GPRS S Mult ti-slo t Clas sses Twenty-nine classes are downlink dir while the se number of s The descrip e classes o product dep rections. Wr econd numb slots the GP of GPRS mu pendent, an ritten as 3+1 ber indicates RS device c ulti-slot mod d determine 1 or 2+2, th s the amou can use sim des are def e the maximu e first numb nt of uplink ultaneously fined for MS um achievab ber indicates timeslots. T for both upl S in GPRS ble data rate s the amoun The active s ink and dow specificatio es in both th nt of downlin slots determ wnlink comm on. Multi-slo ot he uplink and d nk timeslots s, al mine the tota munications. ption of differ rent multi-slo ot classes is s shown in t he following g table. Table 51: G GPRS Multi-

-slot Classe es Multi-slot Class Downlin nk Slots Uplink k Slots Ac ctive Slots 1 2 3 4 5 6 7 8 9 10 11 12 13 14 1 2 2 3 2 3 3 4 3 4 4 4 3 4 1 1 2 1 2 2 3 1 2 2 3 4 3 4 es_Hardwa are_Design 1 07 / 103 EG95_Serie 2 3 3 4 4 4 4 5 5 5 5 5 NA A NA A LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 5 6 7 8 6 6 6 6 6 8 8 8 8 8 8 5 5 5 5 5 6 7 8 2 3 4 4 6 2 3 4 4 6 8 1 2 3 4 NA A NA A NA A NA A NA A NA A NA A NA A NA A NA A NA A NA A NA A NA A NA A 6 6 6 6 es_Hardwa are_Design 1 08 / 103 EG95_Serie LTE Sta EG95 Ser andard Mod ries Hardw dule Series s ware Design n 12 App Cod pendix ding S x D E Schem EDGE mes E Mod dulati on an nd Table 52: E EDGE Modu ulation and Coding Sch hemes Coding Sc cheme Mo odulation Coding g Family 1 Timeslot t 2 Tim meslot 4 Timeslot t GM MSK GM MSK GM MSK GM MSK 8-P PSK 8-P PSK 8-P PSK 8-P PSK 8-P PSK C B A C B A B A A 8.80 kbps 17.6 60 kbps 35.20 kbps s 11.2 kbps 22.4 4 kbps 44.8 kbps 14.8 kbps 29.6 6 kbps 59.2 kbps 17.6 kbps 35.2 2 kbps 70.4 kbps 22.4 kbps 44.8 8 kbps 89.6 kbps 29.6 kbps 59.2 2 kbps 118.4 kbps s 44.8 kbps 89.6 6 kbps 179.2 kbps s 54.4 kbps 108. 8 kbps 217.6 kbps s 59.2 kbps 118. 4 kbps 236.8 kbps s MCS-1 MCS-2 MCS-3 MCS-4 MCS-5 MCS-6 MCS-7 MCS-8 MCS-9 es_Hardwa are_Design 1 09 / 103 EG95_Serie

 

 

 

 

 

 

EG!

GA EGo:

SN: }

IMEI:

FCC Il Jee 95-NA 5NAXDG XXXXXX

: XXXXX D: XMR20 XXXXX)

)2008EG9:

ii 1-A398 SGNS XXXX KXXXX 5NAXD

 

 

Quectel Wireless Solutions Company Limited EG95NAXDcoverletter XMR202008EG95NAXD original certifite : 202180788AA00 , date of grant :09/07/2020 FCC ID :XMR202008EG95NAXD Product Name: LTE Module Model Number: EG95-NAX, EG95-NAXD Hardware Version: R1.0 EG95-NAXand EG95-NAXD share thesameHWdesign and BOM, that means they have completely same hardware, The onlydifference is EG95-NAXD disabled voice functionality by software change. All reports are updated as follows:

EG95-NAXD (Report No.: R2006A0378-M1) is a variant of the EG95-NAX (Report No.:

R1907A0407-M1). Test values duplicated from Original for variant. There is no test for variant in this report. The detailed product change description please refers to the Statement letter_EG95-NAX&EG95-NAXD. EG95-NAXD (Report No.: R2006A0378-M2) is a variant of the EG95-NAX (Report No.:

R1907A0407-M2V1). Test values duplicated from Original for variant. There is no test for variant in this report. The detailed product change description please refers to the Statement letter_EG95-NAX&EG95-NAXD. EG95-NAXD (Report No.: R2006A0378-R1) is a variant of the EG95-NAX (Report No.:

R1907A0407-R1). Test values duplicated from Original for variant. There is only tested Frequency Stability and Spurious Emissions at Antenna Terminals for variant in this report. The detailed product change description please refers to the Statement letter_EG95-NAX & EG95-NAXD. EG95NAXD(ReportNo.:R2006A0378R2)isavariantoftheEG95NAX(ReportNo.:

R1907A0407R2).TestvaluesduplicatedfromOriginalforvariant.Thereisonlytested FrequencyStabilityforvariantinthisreport.Thedetailedproductchangedescriptionplease referstotheStatementletter_EG95NAX&EG95NAXD. EG95NAXD(ReportNo.:R2006A0378R3)isavariantoftheEG95NAX(ReportNo.:

R1907A0407R3).TestvaluesduplicatedfromOriginalforvariant.Thereisonlytested Freq quencyStabil lityandSpur iousEmission nsatAntenn aTerminalsf forvariantin nthisreport. The deta ailedproduct tchangedesc criptionpleas sereferstot heStatemen ntletter_EG9 5NAX&

EG9 5NAXD. EG9 95-NAXD (R Report No.:

R2006A037 78-R4) is a v variant of th he EG95-NA AX (Report No.:

R19 907A0407-R R4). Test val lues partial duplicated d from Origi inal for vari iant. There is only y tested Ra adiates Spu rious Emis sion of WC CDMA Band V middle c channel and d Freq quency Sta ability for va ariant in thi s report. Th he detailed product ch hange des scription ple ease refers to the Stat ement lette er_EG95-NA AX & EG95-

NAXD. EG9 R19 test Stab refe 95-NAXD (R 907A0407-R ted Radiate bility for va ers to the St Report No.:

R5). Test va es Spurious ariant in thi tatement le R2006A037 alues dupli s Emission is report. T etter_EG95-

78-R5) is a v cated from of LTE Ba The detailed NAX & EG9 variant of th m Original f nd 2 middl d product c 95-NAXD. he EG95-NA for variant. e channel change des AX (Report

. There is and Freque cription ple No.:

only ency ease EG9 R19 test vari Stat 95-NAXD (R 907A0407-R ted Freque iant in this tement lette Report No.:

R6V1). Test ency Stabil report. The er_EG95-NA R2006A037 values dup lity and Sp e detailed p AX& EG95-

78-R6) is a v plicated fro purious Em product cha NAXD. variant of th om Original missions a ange descri he EG95-NA for variant at Antenna iption pleas AX (Report t. There is Terminals se refers to No.:

only s for o the You ur assistance e on this mat tter is highly y appreciated d. Sign nature:

Prin nt name: Jea an Hu Date e: 08/27/202 20 Com mpany: Quec ctel Wireles s Solutions Co., Ltd. dress: Buildin hang Distric ail: jean.hu ng 5, Shang ct, Shanghai u@quectel.c ghai Busines

, China 200 com ss Park Pha 233 Add Min Ema se III (Area B), No.1016 6 Tianlin Roa ad,

 

 

 

 

 

 

 

 

 

 

Quectel Wireless Solutions Co., Ltd POWER OF ATTORNEY We, the undersigned, hereby authorize TA Technology (Shanghai) Co., Ltd.

/jinnan han on our behalf, to apply to FCC on our equipment for FCC ID:

XMR202008EG95NAXD. Any and all acts carried out by TA Technology

(Shanghai) Co., Ltd. / jinnan han on our behalf shall have the same effect as DATE: August 27, 2020 To:

Federal Communications Commission, Authorization & Evaluation Division, 7435 Oakland Mills Road, Columbia, MD 21046 acts of our own. Sincerely, Signature:

Print name: Jean Hu Company: Quectel Wireless Solutions Company Limited

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Quectel Wireless Solutions Co., Ltd Request for Confidentiality Date: _2020/09/07_ Subject: Confidentiality Request for: _____ FCC ID: XMR202008EG95NAXD ______ Pursuant to FCC 47 CRF 0.457(d) and 0.459 and IC RSP-100, Section 10, the applicant requests that a part of the subject FCC application be held confidential. Type of Confidentiality Requested Short Term Permanent Exhibit Tune-Up Procedure

*Note: ______(Insert Explanation as Necessary)______ ______ FCC ID: XMR202008EG95NAXD _____ has spent substantial effort in developing this product and it is one of the first of its kind in industry. Having the subject information easily available to "competition" would negate the advantage they have achieved by developing this product. Not protecting the details of the design will result in financial hardship. Permanent Confidentiality:

The applicant requests the exhibits listed above as permanently confidential be permanently withheld from public review due to materials that contain trade secrets and proprietary information not customarily released to the public. Short-Term Confidentiality:

The applicant requests the exhibits selected above as short term confidential be withheld from public view for a period of ______ days from the date of the Grant of Equipment Authorization and prior to marketing. This is to avoid premature release of sensitive information prior to marketing or release of the product to the public. Applicant is also aware that they are responsible to notify TCB in the event information regarding the product or the product is made available to the public. TCB will then release the documents listed above for public disclosure pursuant to FCC Public Notice DA 04-1705. NOTE for Industry Canada Applications:

The applicant understands that until such time that IC distinguishes between Short Term and Permanent Confidentiality, either type of marked exhibit above will simply be marked Confidential when submitted to IC. Sincerely, By:

(Signature/Title1) Jean Hu

(Print name)

 

 

Quect tel Wire eless S EG95 Solution 5NAXDcover s Com letter pany L imited XMR R202008EG95 5NAXD origin nal certifite :

192181106 6AA00 , date e of grant :1 2/02/2019 95-NAXand mpletely sam ctionality by d EG95-NAX me hardware, y software ch XDshare the

, The onlydi hange. esameHWde ifference is E esign and BO EG95-NAXD OM, that me D disabled v eans they hav voice ve FCC C ID :XMR2 201909EG95 5NAX oduct Name del Number rdware Ver

: LTE Modu r: EG95-NA rsion: R1.0 ule AX, EG95-N NAXD Pro Mod Har EG9 com func You ur assistance e on this mat tter is highly y appreciated d. Sign nature:

Prin nt name: Jea an Hu Date e: 08/27/202 20 Com mpany: Quec ctel Wireles s Solutions Co., Ltd. dress: Buildin hang Distric ail: jean.hu ng 5, Shang ct, Shanghai u@quectel.c ghai Busines

, China 200 com ss Park Pha 233 Add Min Ema se III (Area B), No.1016 6 Tianlin Roa ad,

 

 

Quectel Wireless Solutions Co., Ltd Request for Changing of FCC ID Date: September 7, 2020 We, Quectel Wireless Solutions Co., Ltd , hereby apply for changing of FCC ID. The new FCC ID we will use is XMR202008EG95NAXD. Here we declare that the products which will bear two different FCC IDs are totally the same as each other in every aspect. The information of the original FCC ID:

FCC ID: XMR201909EG95NAX Model number: EG95-NAX Applicant: Quectel Wireless Solutions Co., Ltd Address: Building5,ShanghaiBusinessParkPhaseIII(AreaB),No.1016TianlinRoad, MinhangDistrict,Shanghai,China200233 Device name: LTE Module Date of Grant: 12/02/2019 The information of new FCC ID:

FCC ID: XMR202008EG95NAXD Model number: EG95-NAXD Applicant: Quectel Wireless Solutions Co., Ltd Address: Building5,ShanghaiBusinessParkPhaseIII(AreaB),No.1016TianlinRoad, MinhangDistrict,Shanghai,China200233 Device name: LTE Module The original test results continue to be representative of and applicable to the equipment bearing the changed (new) FCC ID. Thank you. Regards, Yours Sincerely, Print name:

Signature: Jean Hu/Project Manager Quectel Wireless Solutions Co., Ltd Company: Quectel Wireless Solutions Co., Ltd